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Gas Transport Optimization for Atomic Layer Deposition Processes (ALD)

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Gas Transport Optimization for Atomic Layer Deposition Processes (ALD)

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dc.contributor.advisor Vila Pastor, Carlos es_ES
dc.contributor.advisor Persson, Anton es_ES
dc.contributor.author Molina Casino, Samuel es_ES
dc.date.accessioned 2021-10-25T17:03:02Z
dc.date.available 2021-10-25T17:03:02Z
dc.date.created 2021-09-24
dc.date.issued 2021-10-25 es_ES
dc.identifier.uri http://hdl.handle.net/10251/175532
dc.description.abstract [ES] El proyecto se centra en la optimización del flujo en procesos ALD. Para ello se pretenden mejorar tanto el tiempo de un ciclo completo como la uniformidad de la capa depositada. El método de optimización se desarrollará haciendo uso de un benchmark validable y, posteriormente, será aplicado al reactor ALD. Mediante el software CFD Ansys Fluent se modelará el comportamiento del flujo dentro del reactor, obteniendo así una aproximación de alta fidelidad del proceso. A partir de esta, se calculará un modelo de orden reducido (ROM) por medio del método de superficie de respuesta (RSM). Dicho modelo reducido será optimizado con programación cuadrática secuencial (SQP). es_ES
dc.description.abstract [EN] This Master’s Thesis proposes an optimization method for Atomic Layer Deposition (ALD) reactors. ALD is a manufacturing process that consists of the creation of thin layers of material over a surface (substrate) by deposition due to chemical reactions between the surface compounds and the precursor gas being injected into the working chamber. Numerous factors affect the resulting layer, the multi-disciplinary nature of the method makes it especially interesting for optimization processes. The objective of the project is to establish a procedure to reduce the purge time needed to evacuate the residual gas after the deposition as well as to maximize the uniformity of the precursor’s concentration over the substrate. In order to develop the method, a well-studied ventilation benchmark was employed. This case was modeled to mimic the phenomena expected to take place inside an ALD reactor. After the benchmark, the method has been successfully applied to a real reactor. The geometry used to represent it is a true replica of the Picosun R-200. This last one is a hot-wall thermal reactor and the simulated process is based on Trimethylaluminum precursor and N2 carrier gas. The formulated algorithm consists of using Computational Fluid Dynamics simulations to create a high-fidelity approximation of the system. These are later used in a Design of Experiments to obtain a relevant amount of samples to build a Response Surface Approximation surrogate model. This model constitutes a low-fidelity approximation which can be easily optimized with a Sequential Quadratic Programming algorithm. The calculation of optimum points for different permits to obtain the characteristic Pareto-Optimal Front of the reactor. The results from the application of the scheme to both response functions show the opposite needs in terms of mass flow to optimize the purge and uniformity. Temperature and pressure, on the other hand, have smaller effects on the results, but they are also discussed. es_ES
dc.format.extent 101 es_ES
dc.language Inglés es_ES
dc.publisher Universitat Politècnica de València es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject CFD es_ES
dc.subject Computational Fluid Dynamics es_ES
dc.subject Optimización es_ES
dc.subject Atomic Layer Deposition es_ES
dc.subject ALD es_ES
dc.subject Response Surface Method es_ES
dc.subject Sequential Quadratic Programming es_ES
dc.subject.classification INGENIERIA DE LOS PROCESOS DE FABRICACION es_ES
dc.subject.other Máster Universitario en Ingeniería Aeronáutica-Màster Universitari en Enginyeria Aeronàutica es_ES
dc.title Gas Transport Optimization for Atomic Layer Deposition Processes (ALD) es_ES
dc.title.alternative Optimización del Flujo en Procesos de Deposición de Capas Atómicas (Atomic Layer Deposition, ALD) es_ES
dc.type Tesis de máster es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Ingeniería Mecánica y de Materiales - Departament d'Enginyeria Mecànica i de Materials es_ES
dc.contributor.affiliation Universitat Politècnica de València. Escuela Técnica Superior de Ingeniería del Diseño - Escola Tècnica Superior d'Enginyeria del Disseny es_ES
dc.description.bibliographicCitation Molina Casino, S. (2021). Gas Transport Optimization for Atomic Layer Deposition Processes (ALD). Universitat Politècnica de València. http://hdl.handle.net/10251/175532 es_ES
dc.description.accrualMethod TFGM es_ES
dc.relation.pasarela TFGM\142513 es_ES


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