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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure

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Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure

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dc.contributor.author Segura, A. es_ES
dc.contributor.author Panchal, V. es_ES
dc.contributor.author Sánchez-Royo, J. F. es_ES
dc.contributor.author Marín-Borrás, V. es_ES
dc.contributor.author Muñoz-Sanjosé, V. es_ES
dc.contributor.author Rodríguez-Hernández, P. es_ES
dc.contributor.author Muñoz, A. es_ES
dc.contributor.author Pérez-González, E. es_ES
dc.contributor.author Manjón Herrera, Francisco Javier es_ES
dc.contributor.author González, J. es_ES
dc.date.accessioned 2015-03-20T10:14:53Z
dc.date.available 2015-03-20T10:14:53Z
dc.date.issued 2012-05-24
dc.identifier.issn 1098-0121
dc.identifier.uri http://hdl.handle.net/10251/48141
dc.description.abstract [EN] This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV at 8 GPa. The quenching of the Burstein-Moss effect in degenerate samples and the shift of the free-carrier plasma frequency to lower energies reveal a quick decrease of the bulk three-dimensional (3D) electron concentration under pressure. On increasing pressure the behavior of Hall electron concentration and mobility depends on the sample thickness, consistently with a gradual transition from mainly 3D transport at ambient pressure to mainly two-dimensional (2D) transport at high pressure. Two-carrier transport equations confirm the trapping of high-mobility 3D electrons, an effect that can be related to a shallow-to-deep transformation of donor levels, associated with a change in the ordering of the conduction band minima. The high apparent areal density and low electron mobility of 2D electrons are not compatible with their expected properties in a Dirac cone. Measured transport parameters at high pressure are most probably affected by the presence of holes, either in an accumulation surface layer or as minority carriers in the bulk. ©2012 American Physical Society es_ES
dc.description.sponsorship This work has been done under financial support from Spanish MICINN under Grants No. MAT2008-06873-C02-02, No. MAT2007-66129, No. MAT2010-21270-C04-03/04, No. CSD2007-00045, and Prometeo No. GV2011/035. The supercomputer time has been provided by the Red Espanola de Supercomputacion (RES) and the MALTA cluster.
dc.language Inglés es_ES
dc.publisher American Physical Society es_ES
dc.relation.ispartof Physical Review B es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Initio molecular-dynamics es_ES
dc.subject Conduction-band structure es_ES
dc.subject Total-Energy calculations es_ES
dc.subject Augmented-wave method es_ES
dc.subject Diamond-anvil cell es_ES
dc.subject Single dirac cone es_ES
dc.subject Bismuth selenide es_ES
dc.subject Basis-set es_ES
dc.subject Surface es_ES
dc.subject Semiconductors es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1103/PhysRevB.85.195139
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2008-06873-C02-02/ES/SEMICONDUCTORES MAGNETICOS DE GAP ANCHO (ZNM)O (M:CO,MN,FE) Y SUS FASES DE ALTA PRESION. DEPOSICION E CAPA DELGADA Y PROPIEDADES ESTRUCTURALES Y MAGNETO-OPTICAS/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//PROMETEO%2F2011%2F035/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MEC//MAT2007-66129/ES/OXIDOS SEMICONDUCTORES II-VI PARA LA OPTOELECTRONICA UV Y LA ESPINTRONICA/
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-03/ES/MATERIALES, NANOMATERIALES Y AGREGRADOS BAJO CONDICIONES EXTREMAS. PROPIEDADES ELECTRONICAS Y DINAMICAS DESDE METODOS AB INITIO/
dc.relation.projectID info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.description.bibliographicCitation Segura, A.; Panchal, V.; Sánchez-Royo, JF.; Marín-Borrás, V.; Muñoz-Sanjosé, V.; Rodríguez-Hernández, P.; Muñoz, A.... (2012). Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi2Se3 under high pressure. Physical Review B. 85:195139-1-195139-9. https://doi.org/10.1103/PhysRevB.85.195139 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://journals.aps.org/prb/pdf/10.1103/PhysRevB.85.195139 es_ES
dc.description.upvformatpinicio 195139-1 es_ES
dc.description.upvformatpfin 195139-9 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 85 es_ES
dc.relation.senia 230157
dc.identifier.eissn 1550-235X
dc.contributor.funder Ministerio de Ciencia e Innovación
dc.contributor.funder Generalitat Valenciana
dc.contributor.funder Ministerio de Educación y Ciencia es_ES
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