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p-n Heterojunction of Doped Graphene Films Obtained by Pyrolysis of Biomass Precursors

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p-n Heterojunction of Doped Graphene Films Obtained by Pyrolysis of Biomass Precursors

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dc.contributor.author Latorre Sánchez, Marcos es_ES
dc.contributor.author Primo Arnau, Ana María es_ES
dc.contributor.author Atienzar Corvillo, Pedro Enrique es_ES
dc.contributor.author Forneli Rubio, Mª Amparo es_ES
dc.contributor.author García Gómez, Hermenegildo es_ES
dc.date.accessioned 2016-05-16T12:42:44Z
dc.date.issued 2015-02-25
dc.identifier.issn 1613-6810
dc.identifier.uri http://hdl.handle.net/10251/64120
dc.description.abstract Nitrogen-doped graphene [(N)G] obtained by pyrolysis at 900 degrees C of nanometric chitosan films exhibits a Hall effect characteristic of n-type semiconductors. In contrast, boron-doped graphene [(B)G] obtained by pyrolysis of borate ester of alginate behaves as a p-type semiconductor based also on the Hall effect. A p-n heterojunction of (B) G-(N) G films is built by stepwise coating of a quartz plate using a mask. The heterojunction is created by the partial overlapping of the (B) G-(N) G films. Upon irradiation with a xenon lamp of aqueous solutions of H2PtCl6 and MnCl2 in contact with the heterojunction, preferential electron migration from (B) G to (N) G with preferential location of positive holes on (B) G is established by observation in scanning electron microscopy of the formation of Pt nanoparticles (NP) on (N) G and MnO2 NP on (B) G. The benefits of the heterojunction with respect to the devices having one individual component as a consequence of the electron migration through the p-n heterojunction are illustrated by measuring the photocurrent in the (B) G-(N) G heterojunction (180% current enhancement with respect to the dark current) and compared it to the photocurrent of the individual (B) G (15% enhancement) and (N) G (55% enhancement) components. es_ES
dc.description.sponsorship Financial Support by the Spanish Ministry of Economy and Competitiveness (Severo Ochoa and CTQ2012-32315) is gratefully acknowledged. MLS and PA thank also to the Spanish Ministry and the National Research Council for a postgraduate scholarship and a research associate contract, respectively. en_EN
dc.language Inglés es_ES
dc.publisher Wiley-VCH Verlag es_ES
dc.relation Spanish Ministry of Economy and Competitiveness (Severo Ochoa) es_ES
dc.relation Spanish Ministry of Economy and Competitiveness CTQ2012-32315 es_ES
dc.relation Spanish Ministry es_ES
dc.relation National Research Council es_ES
dc.relation.ispartof Small es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject HYDROGEN GENERATION es_ES
dc.subject PHOTOCATALYST es_ES
dc.subject SILICON es_ES
dc.subject OXIDE es_ES
dc.subject CARBOCATALYST es_ES
dc.subject OXIDATION es_ES
dc.subject.classification QUIMICA ORGANICA es_ES
dc.subject.classification QUIMICA ANALITICA es_ES
dc.title p-n Heterojunction of Doped Graphene Films Obtained by Pyrolysis of Biomass Precursors es_ES
dc.type Artículo es_ES
dc.embargo.lift 10000-01-01
dc.embargo.terms forever es_ES
dc.identifier.doi 10.1002/smll.201402278
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Química - Departament de Química es_ES
dc.description.bibliographicCitation Latorre Sánchez, M.; Primo Arnau, AM.; Atienzar Corvillo, PE.; Forneli Rubio, MA.; García Gómez, H. (2015). p-n Heterojunction of Doped Graphene Films Obtained by Pyrolysis of Biomass Precursors. Small. 11(8):970-975. doi:10.1002/smll.201402278 es_ES
dc.description.accrualMethod Senia es_ES
dc.relation.publisherversion http://dx.doi.org/10.1002/smll.201402278 es_ES
dc.description.upvformatpinicio 970 es_ES
dc.description.upvformatpfin 975 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 11 es_ES
dc.description.issue 8 es_ES
dc.relation.senia 305136 es_ES
dc.identifier.eissn 1613-6829


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