Brimont, Antoine Christian JacquesGutiérrez Campo, Ana MaríaRasigade, G.Ziebell, M.Marris-Morini, D.Fedeli, J. M.Vivien, L.Martí Sendra, JavierSanchis Kilders, Pablo2013-05-0820120733-8724https://riunet.upv.es/handle/10251/28678[EN] A high-speed ring-assisted Mach-Zehnder interferometer (RAMZI) silicon modulator is reported and experimentally demonstrated. The RAMZI optical structure relaxes the optimum coupling condition of the ring without degrading the modulator performance, which therefore improves the modulator robustness against fabrication deviations and could eventually lead to an enhanced modulation bandwidth. Hence, our RAMZI silicon modulator, based on carrier depletion in a pipin active structure, exhibits a 3 dB electro-optical bandwidth of 19 GHz, enabling up to 20 Gbit/s data transmission over a RF/optical interaction length of only similar to 200 mu m.Reserva de todos los derechosMicroring resonatorsPhotonic integrated circuitsSilicon photonicsWaveguide modulatorsTEORIA DE LA SEÑAL Y COMUNICACIONESRing-assisted Mach-Zehnder interferometer silicon modulator for enhanced performanceArtículo10.1109/JLT.2011.2176314Cerrado