Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

Sarti, F.Muñoz Matutano, GuillermoBauer, D.Dotti, N.Bietti, S.Isella, G.Vinattieri, A.Sanguinetti, S.Gurioli, M.2014-11-242014-11-242013-12-140021-8979https://riunet.upv.es/handle/10251/44639The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device.Reserva de todos los derechosSingle photonsQuantum dotsSemiconductorMultiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substratesArtículo10.1063/1.4844375Abierto