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Listar por autor "URSAKI, VEACHESLAV"

RiuNet: Repositorio Institucional de la Universidad Politécnica de Valencia

Listar por autor "URSAKI, VEACHESLAV"

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    Crystal Chemistry of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels under high pressure 
    Santamaría Pérez, David; Amboage, Mónica; Manjón Herrera, Francisco Javier; Errandonea, Daniel; Muñoz, Alfonso; Rodríguez Hernández, Plácida; Mújica, Andrés; Radescu, Silvana; Ursaki, Veacheslav; Tinginyanu, Ivan (American Chemical Society, 2012-07-05)
    We report X-ray diffraction measurements in CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature and high pressures. The pressure dependences of the structural parameters have been determined and compared to those ...
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    HgGa2Se4 under high pressure: an optical absorption study 
    Gomis, O.; Vilaplana Cerda, Rosario Isabel; Manjón Herrera, Francisco Javier; Ruiz-Fuertes, Javier; Pérez-González, E.; López-Solano, J.; Bandiello, E.; Errandonea, Daniel; Segura, Alfredo; Rodríguez-Hernández, Placida; Muñoz, A.; Ursaki, Veacheslav; Tiginyanu, Ivan M. (Wiley, 2015-09)
    High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order-disorder ...
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    High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds 
    Gomis Hilario, Oscar; Vilaplana Cerda, Rosario Isabel; Manjón Herrera, Francisco Javier; Pérez-González, E.; López-Solano, Javier; Rodríguez-Hernández, P.; Muñoz, Alfonso; Errandonea, Daniel; Ruiz Fuertes, Javier; Segura Garcia del Rio, Alfredo; Santamaría Pérez, David; Tiginyanu, Ivan; Ursaki, Veacheslav (American Institute of Physics (AIP), 2012-01-10)
    High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...
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    High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4 
    Vilaplana Cerda, Rosario Isabel; Gomis Hilario, Oscar; Pérez-González, E.; Ortiz, H. M.; Manjón Herrera, Francisco Javier; Rodríguez-Hernández, P.; Muñoz, Alfonso; Alonso Gutiérrez, P.; Sanjuán, M.L.; Ursaki, Veacheslav; Tiginyanu, Ivan (American Institute of Physics (AIP), 2013-06-17)
    High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...
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    High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4 
    Gomis Hilario, Oscar; Vilaplana Cerda, Rosario Isabel; Manjón Herrera, Francisco Javier; Santamaría-Pérez, D.; Errandonea, D.; Pérez-González, E.; López-Solano, J.; Rodríguez-Hernández, P.; Muñoz, Alfonso; Tiginyanu, Ivan; Ursaki, Veacheslav (American Institute of Physics (AIP), 2013-02-20)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB 2 X 4 ordered-vacancy compounds with tetragonal defect chalcopyrite ...
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    Structural and vibrational properties of CdAl2S4 under high pressure: Experimental and theoretical approach 
    Sans Tresserras, Juan Ángel; Santamaría Pérez, David; Popescu, Catalin; Gomis, O.; Manjón Herrera, Francisco Javier; Vilaplana Cerda, Rosario Isabel; Muñoz, Alfonso; Rodríguez Hernández, Plácida; Ursaki, Veacheslav; Tiginyanu, Ivan (American Chemical Society, 2014-07-17)
    The behavior of defect chalcopyrite CdAl2S4 at high pressures and ambient temperature has been investigated in a joint experimental and theoretical study. High-pressure X-ray diffraction and Raman scattering measurements ...
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    Vibrational properties of CdGa2S4 at high pressure 
    Gallego-Parra, Samuel; Gomis, O.; Vilaplana Cerda, Rosario Isabel; Ortiz, H.M.; Perez-Gonzalez, E.; Luna Molina, Ramón; Rodríguez-Hernández, Plácida; MUÑOZ, ALFONSO; URSAKI, VEACHESLAV; TIGINYANU, IVAN; Manjón, Francisco-Javier (American Institute of Physics, 2019-03-21)
    [EN] Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressure-induced phase transitions. These measurements ...
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    Vibrational study of HgGa2S4 under high pressure 
    Vilaplana Cerda, Rosario Isabel; Robledillo, M.; Gomis Hilario, Oscar; Sans, J.A.; Manjón Herrera, Francisco Javier; Pérez-González, E.; Rodríguez-Hernández, P.; Muñoz, Alfonso; Tiginyanu, Ivan; Ursaki, Veacheslav (American Institute of Physics (AIP), 2013-03-07)
    In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our ...
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    X-ray diffraction study on pressure-induced phase transformations and the equation of state of ZnGa2Te4 
    Errandonea, Daniel; Kumar, R.S.; Gomis Hilario, Oscar; Manjón Herrera, Francisco Javier; Ursaki, Veacheslav; Tiginyanu, Ivan (American Institute of Physics (AIP), 2013-12-18)
    We report on high-pressure x-ray diffraction measurements up to 19.8¿GPa in zinc digallium telluride (ZnGa2Te4) at room temperature. An irreversible structural phase transition takes place at pressures above 12.1¿GPa and ...