Gil Tomás, Daniel Antonio; Saiz-Adalid, Luis-J.; Gracia-Morán, Joaquín; Baraza-Calvo, Juan-Carlos; Gil, Pedro(Institute of Electrical and Electronics Engineers, 2024)
[EN] MBU is an increasing challenge in SRAM memory, due to the chip's large area of SRAM, and supply power scaling applied to reduce static consumption. Powerful ECCs can cope with random MBUs, but at the expense of complex ...
Gracia-Morán, Joaquín; Saiz-Adalid, Luis-J.; Baraza-Calvo, Juan-Carlos; Gil Tomás, Daniel Antonio; Gil, Pedro(Institute of Electrical and Electronics Engineers, 2024-05)
[EN] With the integration scale level reached in CMOS technology, memory systems provide a great storage capacity, but at the price of an augment in their fault rate. In this way, the probability of experiencing Single ...
Gil Tomás, Daniel Antonio; Gracia-Morán, Joaquín; Baraza Calvo, Juan Carlos; Saiz-Adalid, Luis-J.; Gil, Pedro(Institute of Electrical and Electronics Engineers (IEEE), 2012-12)
Intermittent faults, being serious concerns for deep-submicron integrated circuits, are not well studied in the literature. This paper performs fault injection simulation to analyze the impact of intermittent faults, which ...
Baraza Calvo, Juan Carlos(Universitat Politècnica de València, 2008-06-23)
En el diseño de sistemas informáticos (y en particular, de aquéllos en los que, por las características del servicio que prestan, un mal funcionamiento puede provocar pérdida de vidas humanas, perjuicio económico, suspensión ...
Gracia-Morán, Joaquín; Saiz-Adalid, Luis-J.; Baraza-Calvo, Juan-Carlos; Gil Tomás, Daniel Antonio; Gil, Pedro(Institute of Electrical and Electronics Engineers, 2021-11)
[EN] The continuous raise in the integration scale of CMOS technology has provoked an augment in the fault rate. Particularly, computer memory is affected by Single Cell Upsets (SCU) and Multiple Cell Upsets (MCU). A common ...
Gracia-Morán, Joaquín; Baraza Calvo, Juan Carlos; Gil Tomás, Daniel Antonio; Saiz-Adalid, Luis-J.; Gil, Pedro(Institute of Electrical and Electronics Engineers (IEEE), 2014-01-24)
With the scaling of complementary metal-oxide-semiconductor (CMOS) technology to the submicron range, designers have to deal with a growing number and variety of fault types. In this way, intermittent faults are gaining ...
Baraza Calvo, Juan Carlos; Gracia-Morán, Joaquín; Blanc Clavero, Sara; Gil Tomás, Daniel Antonio; Gil Vicente, Pedro Joaquín(Institute of Electrical and Electronics Engineers (IEEE), 2008)
Deep submicrometer devices are expected to be increasingly sensitive to physical faults. For this reason, fault-tolerance mechanisms are more and more required in VLSI circuits. So, validating their dependability is a prior ...
Aspas Coronado, Iván(Universitat Politècnica de València, 2019-10-17)
[ES] Las tecnologías de memoria que constituyen el mercado actual están llegando a su límite de escalabilidad, y pronto la ley de Moore ya no podría aplicarse a estas tecnologías en su estado actual. La creciente demanda ...
Gil Tomás, Daniel Antonio; Gracia-Morán, Joaquín; Saiz-Adalid, Luis-J.; Gil, Pedro(MDPI AG, 2019-07-31)
[EN] Due to the increasing defect rates in highly scaled complementary metal-oxide-semiconductor (CMOS) devices, and the emergence of alternative nanotechnology devices, reliability challenges are of growing importance. ...
Gracia-Morán, Joaquín; Saiz-Adalid, Luis-J.; Gil Tomás, Daniel Antonio; Gil, Pedro(Institute of Electrical and Electronics Engineers, 2018)
[EN] Currently, faults suffered by SRAM memory
systems have increased due to the aggressive CMOS integration
density. Thus, the probability of occurrence of single-cell
upsets (SCUs) or multiple-cell upsets (MCUs) ...
Gil Tomás, Daniel Antonio; Gracia Morán, Joaquín; Baraza Calvo, Juan Carlos; Saiz Adalid, Luis José; Gil Vicente, Pedro Joaquín(Institute of Electrical and Electronics Engineers (IEEE), 2016-06)
As scaling is more and more aggressive, intermittent faults are increasing their importance in current deep submicron complementary metal-oxide-semiconductor (CMOS) technologies. This work shows the dependability assessment ...
Baraza Calvo, Juan Carlos; Gracia-Morán, Joaquín; Saiz-Adalid, Luis-J.; Gil Tomás, Daniel Antonio; Gil, Pedro(MDPI AG, 2020-12)
[EN] Due to transistor shrinking, intermittent faults are a major concern in current digital systems. This work presents an adaptive fault tolerance mechanism based on error correction codes (ECC), able to modify its ...
Saiz-Adalid, Luis-J.; Gracia-Morán, Joaquín; Gil Tomás, Daniel Antonio; Baraza Calvo, Juan Carlos; Gil, Pedro(MDPI AG, 2020-11)
[EN] The Bose-Chaudhuri-Hocquenghem (BCH) codes are a well-known class of powerful error correction cyclic codes. BCH codes can correct multiple errors with minimal redundancy. Primitive BCH codes only exist for some word ...
Gil Tomás, Daniel Antonio; Gracia-Morán, Joaquín; Baraza Calvo, Juan Carlos; Saiz-Adalid, Luis-J.; Gil Vicente, Pedro Joaquín(Elsevier, 2012-11)
As CMOS technology scales to the nanometer range, designers have to deal with a growing number and variety of fault types. Particularly, intermittent faults are expected to be an important issue in modern VLSI circuits. ...
Saiz-Adalid, Luis-J.; Gracia-Morán, Joaquín; Gil Tomás, Daniel Antonio; Baraza Calvo, Juan Carlos; Gil, Pedro(Institute of Electrical and Electronics Engineers, 2019-10-14)
[EN] Reliable computer systems employ error control codes (ECCs) to protect information from errors. For example, memories are frequently protected using single error correction-double error detection (SEC-DED) codes. ECCs ...
Gracia Morán, Joaquín(Universitat Politècnica de València, 2010-04-20)
La inyección de fallos es una técnica utilizada para la validación experimental de Sistemas Tolerantes a Fallos. Se distinguen tres grandes categorías: inyección de fallos física (denominada también physical fault injection ...