Valero Bresó, Alejandro; Petit Martí, Salvador Vicente; Sahuquillo Borrás, Julio; Kaeli, David R.; Duato Marín, José Francisco(Elsevier, 2015-02)
DRAM technology requires refresh operations to be performed in order to avoid data loss due to capacitance
leakage. Refresh operations consume a significant amount of dynamic energy, which increases
with the storage ...
Valero Bresó, Alejandro; Candel-Margaix, Francisco; Suárez-Gracia, Darío; Petit Martí, Salvador Vicente; Sahuquillo Borrás, Julio(Institute of Electrical and Electronics Engineers, 2019-01-01)
[EN] Nowadays, GPUs sit at the forefront of high-performance computing thanks to their massive computational capabilities. Internally, thousands of functional units, architected to be fed by large register files, fuel such ...
Lorente Garcés, Vicente Jesús; Valero Bresó, Alejandro; Sahuquillo Borrás, Julio; Petit Martí, Salvador Vicente; Canal, Ramón; López Rodríguez, Pedro Juan; Duato Marín, José Francisco(IEEE, ACM, 2013-03-18)
Low-power modes in modern microprocessors rely
on low frequencies and low voltages to reduce the energy budget.
Nevertheless, manufacturing induced parameter variations can
make SRAM cells unreliable producing hard ...
Valero Bresó, Alejandro; Sahuquillo Borrás, Julio; Petit Martí, Salvador Vicente; López Rodríguez, Pedro Juan; Duato Marín, José Francisco(Association for Computing Machinery (ACM), 2012)
Memory latency has become an important performance bottleneck in current microprocessors. This problem aggravates as the number of cores sharing the same memory controller increases. To palliate this problem, a common ...
Valero Bresó, Alejandro; Sahuquillo Borrás, Julio; Petit Martí, Salvador Vicente; López Rodríguez, Pedro Juan; Duato Marín, José Francisco(Institute of Electrical and Electronics Engineers (IEEE), 2015-07)
In recent years, embedded dynamic random-access memory (eDRAM) technology has been implemented in last-level
caches due to its low leakage energy consumption and high density. However, the fact that eDRAM presents slower ...
Valero Bresó, Alejandro; Petit Martí, Salvador Vicente; Sahuquillo Borrás, Julio; López Rodríguez, Pedro Juan; Duato Marín, José Francisco(Institute of Electrical and Electronics Engineers (IEEE), 2012-09)
SRAM and DRAM have been the predominant technologies used to implement memory cells in computer systems, each one having its advantages and shortcomings. SRAM cells are faster and require no refresh since reads are not ...
Tárrega Sánchez, Hugo(Universitat Politècnica de València, 2020-09-16)
[ES] Las memorias cache de un microprocesador se implementan habitualmente con tecnología Static Random-Access Memory (SRAM) puesto que es la tecnología electrónica más rápida. Sin embargo, las caches SRAM ocupan un área ...
Candel-Margaix, Francisco; Valero Bresó, Alejandro; Petit Martí, Salvador Vicente; Sahuquillo Borrás, Julio(Institute of Electrical and Electronics Engineers, 2019-10-01)
[EN] To support the massive amount of memory accesses that GPGPU applications generate, GPU memory hierarchies are becoming more and more complex, and the Last Level Cache (LLC) size considerably increases each GPU generation. ...
Unlike other previous techniques, the recently proposed Hard Error
Recovery (HER) fault-tolerant cache provides 100% fault-coverage in L1 data
caches. This full coverage makes the HER cache appropiate for fault-dominated
future ...
Valero Bresó, Alejandro; Miralaei, Negar; Petit Martí, Salvador Vicente; Sahuquillo Borrás, Julio; Jones, Timothy M.(Institute of Electrical and Electronics Engineers (IEEE), 2016-07)
[EN] Over the lifetime of a microprocessor, the Hot Carrier Injection (HCI) phenomenon degrades the threshold voltage, which causes slower transistor switching and eventually results in timing violations and faulty operation. ...
Valero Bresó, Alejandro; Sahuquillo Borrás, Julio; Petit Martí, Salvador Vicente; Duato Marín, José Francisco(ACM, 2013-06)
This work introduces a novel refresh mechanism that leverages
reuse information to decide which blocks should be refreshed in an
energy-aware eDRAM last-level cache. Experimental results show
that, compared to a ...
Tárrega Sánchez, Hugo(Universitat Politècnica de València, 2021-11-12)
[ES] El presente trabajo aborda la necesidad cada vez mayor por parte de la
industria de los semiconductores de contar con memorias cache más densas
y con un menor consumo energético que las actuales. Debido a que ...
Valero Bresó, Alejandro(Editorial Universitat Politècnica de València, 2013-10-07)
Cache memories have been usually implemented with Static Random-Access Memory
(SRAM) technology since it is the fastest electronic memory technology. However, this
technology consumes a high amount of leakage currents, ...
Valero Bresó, Alejandro; Sahuquillo Borrás, Julio; Lorente Garcés, Vicente Jesús; Petit Martí, Salvador Vicente; López Rodríguez, Pedro Juan; Duato Marín, José Francisco(Institute of Electrical and Electronics Engineers (IEEE), 2012-06)
[EN] Cache memories dissipate an important amount of the energy budget in current microprocessors. This is mainly due to cache cells are typically implemented with six transistors. To tackle this design concern, recent ...
Valero Bresó, Alejandro; Miralaei, Negar; Petit Martí, Salvador Vicente; Sahuquillo Borrás, Julio; Jones, Timothy M.(Institute of Electrical and Electronics Engineers, 2017-03)
[EN] Hot carrier injection (HCI) and bias temperature instability (BTI) are two of the main deleterious effects that increase a transistor's threshold voltage over the lifetime of a microprocessor. This voltage degradation ...