High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order-disorder ...
High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...
Vilaplana Cerda, Rosario Isabel; Gomis Hilario, Oscar; Pérez-González, E.; Ortiz, H. M.; Manjón Herrera, Francisco Javier; Rodríguez-Hernández, P.; Muñoz, Alfonso; Alonso Gutiérrez, P.; Sanjuán, M.L.; Ursaki, Veacheslav; Tiginyanu, Ivan(American Institute of Physics (AIP), 2013-06-17)
High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...
Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite crystal structure (R-3m) which have been extensively studied along with their alloys due to their promising operation as thermoelectric materials ...
In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB 2 X 4 ordered-vacancy compounds with tetragonal defect chalcopyrite ...
We report an experimental and theoretical lattice dynamics study of bismuth telluride (Bi2Te3) up to 23 GPa together with an experimental and theoretical study of the optical absorption and reflection up to 10 GPa. The ...
We report an experimental and theoretical lattice dynamics study of antimony telluride (Sb 2Te 3) up to 26 GPa together with a theoretical study of its structural stability under pressure. Raman-active modes of the ...
Gomis Hilario, Oscar; Santamaría-Pérez, D.; Vilaplana Cerda, Rosario Isabel; Luna Molina, Ramón; Sans, J. A.; Manjón Herrera, Francisco Javier; Errandonea, D.; Pérez-González, E.; Rodríguez-Hernández, P.; Muñoz, A.; Tiginyanu, I. M.; Ursaki, V. V.(Elsevier, 2014-01-15)
In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB(2)X(4) ordered-vacancy compounds and exhibits ...
The structural and vibrational properties of bismuth selenide (Bi 2Se 3) have been studied by means of x-ray diffraction and Raman scattering measurements up to 20 and 30 GPa, respectively. The measurements have been ...
Vilaplana Cerda, Rosario Isabel; Gomis Hilario, Oscar; Pérez-González, E.; Ortiz, H. M.; Manjón Herrera, Francisco Javier; Rodríguez-Hernández, P.; Muñoz, A.; Alonso-Gutiérrez, P.; Sanjuán, M. L.; Ursaki, V. V.; Tiginyanu, I. M.(IOP Publishing: Hybrid Open Access, 2013-04-24)
Order-disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown ...
[EN] This paper reports an experimental and theoretical investigation on the electronic structure of bismuth selenide (Bi2Se3) up to 9 GPa. The optical gap of Bi2Se3 increases from 0.17 eV at ambient pressure to 0.45 eV ...
Vilaplana Cerda, Rosario Isabel; Robledillo, M.; Gomis Hilario, Oscar; Sans, J.A.; Manjón Herrera, Francisco Javier; Pérez-González, E.; Rodríguez-Hernández, P.; Muñoz, Alfonso; Tiginyanu, Ivan; Ursaki, Veacheslav(American Institute of Physics (AIP), 2013-03-07)
In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our ...