Gracia-Morán, Joaquín; Saiz-Adalid, Luis-J.; Gil Tomás, Daniel Antonio; Gil, Pedro(Institute of Electrical and Electronics Engineers, 2018)
[EN] Currently, faults suffered by SRAM memory
systems have increased due to the aggressive CMOS integration
density. Thus, the probability of occurrence of single-cell
upsets (SCUs) or multiple-cell upsets (MCUs) ...