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Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires

Sinusia Lozano, Miguel; Gómez-Hernández, Víctor Jesús (Royal Society of Chemistry, 2023-03-28)

[EN] Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III¿V semiconductor NWs, both zinc blende (ZB) ...
Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires

Gómez-Hernández, Víctor Jesús; Marnauza, Mikelis; Dick, Kimberly A.; Lehmann, Sebastian (Royal Society of Chemistry, 2022-08-11)

[EN] In this work we demonstrate a two-fold selectivity control of InAs shells grown on crystal phase and morphology engineered GaAs nanowire (NW) core templates. This selectivity occurs driven by differences in surface ...
Modelling of GaAsP/InGaAs/GaAs strain-balanced multiple-quantum well solar cells

Cabrera, C. I.; Rimada, J. C.; Connolly, James Patrick; Hernandez, L. (AIP Publishing, 2013-01-14)

A model of strain balanced quantum well solar cells is presented, together with a high efficiency design for a GaAsP/InGaAs/GaAs device. The effect of tensile and compressive strain on bandstructure is considered in order ...

Mostrando ítems 1-3 de 3