Montoliu Álvaro, Carles; Ferrando Jódar, Néstor; Cerdá Boluda, Joaquín; Colom Palero, Ricardo José(Taylor & Francis (Routledge): STM, Behavioural Science and Public Health Titles, 2014-01-02)
[EN] Atomistic models are a very valuable simulation tool in the field of material science. Among them are the continuous cellular automata (CCA), which can simulate accurately the process of chemical etching used in ...
González Albuixech, Vicente Francisco; Giner Maravilla, Eugenio; Tarancón Caro, José Enrique; Fuenmayor Fernández, Francisco Javier; Gravouil, A.(Wiley, 2013-05-25)
The aim of this study is the analysis of the convergence rates achieved with domain energy integrals for the computation of the stress intensity factors (SIF) when solving 2-D curved crack problems with the extended FEM ...
Montoliu Álvaro, Carles(Universitat Politècnica de València, 2013-02-06)
[ES] En el presente trabajo se ha implementado el método Level Set (LS) para poder ser aplicado para simular el proceso de atacado anisótropo húmedo utilizado para la fabricación de microestructuras. En la actualidad para ...
We present a three-dimensional simulator of silicon dioxide etching in a uorocarbon plasma process. Explicit parametrization of the surface is currently one of the most frequently used methods to evolve the etched surface ...