Buscar en RiuNet

Listar

Mostrando ítems 1-3 de 3

A SiGe Slot Approach for Enhancing Strain Induced Pockels Effect in the Mid-IR Range

Olivares-Sánchez-Mellado, Irene; Sanchis Kilders, Pablo (Institute of Electrical and Electronics Engineers, 2021-08-15)

[EN] Strained silicon was proposed more than a decade ago promising to revolutionize the silicon photonics field by allowing efficient modulation in this platform. Despite all the efforts, still rather low chi(2) values ...
Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs

Delgado-Notario, Juan A.; Calvo-Gallego, Jaime; Velázquez-Pérez, Jesús E.; Ferrando Bataller, Miguel; Fobelets, Kristel; Meziani, Yahya M. (MDPI AG, 2020-09)

[EN] Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor ...
Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs

Calvo-Gallego, Jaime; Delgado-Notario, Juan A.; Velázquez-Pérez, Jesús E.; Ferrando Bataller, Miguel; Fobelets, Kristel; El Moussaouy, Abdelaziz; Meziani, Yahya M. (MDPI AG, 2021-02)

[EN] This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones ...

Mostrando ítems 1-3 de 3