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On the influence of interface charging dynamics and stressing conditions in strained silicon devices

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On the influence of interface charging dynamics and stressing conditions in strained silicon devices

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Olivares-Sánchez-Mellado, I.; Ivanova-Angelova, T.; Sanchis Kilders, P. (2017). On the influence of interface charging dynamics and stressing conditions in strained silicon devices. Scientific Reports. 7(7241):1-8. https://doi.org/10.1038/s41598-017-05067-9

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Metadatos del ítem

Título: On the influence of interface charging dynamics and stressing conditions in strained silicon devices
Autor: Olivares-Sánchez-Mellado, Irene Ivanova-Angelova, Todora Sanchis Kilders, Pablo
Entidad UPV: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Fecha difusión:
Resumen:
[EN] The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly ...[+]
Palabras clave: Strained silicon , Silicon photonics
Derechos de uso: Reconocimiento (by)
Fuente:
Scientific Reports. (issn: 2045-2322 )
DOI: 10.1038/s41598-017-05067-9
Editorial:
Nature Publishing Group
Versión del editor: http://doi.org/10.1038/s41598-017-05067-9
Código del Proyecto:
info:eu-repo/grantAgreement/MINECO//TEC2016-76849-C2-2-R/ES/DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/
info:eu-repo/grantAgreement/GVA//PROMETEOII%2F2014%2F034/ES/Nanomet Plus/
Agradecimientos:
Funding from projects TEC2016-76849-C2-2-R (MINECO/FEDER, UE) and NANOMET PLUS-Conselleria d'EducaciA<SUP>3</SUP>, Cultura i Esport - PROMETEOII/2014/034 is acknowledged. Irene Olivares also acknowledges the Universitat ...[+]
Tipo: Artículo

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