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Annealing study of electrodeposited CuInSe2 and CuInS2 thin films

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Annealing study of electrodeposited CuInSe2 and CuInS2 thin films

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dc.contributor.author Saber, Suzan es_ES
dc.contributor.author Mollar García, Miguel Alfonso es_ES
dc.contributor.author El Nahrawy, Amany es_ES
dc.contributor.author Khattab, Nagwa es_ES
dc.contributor.author Eid, Ali es_ES
dc.contributor.author Abo Ali, Mohamed es_ES
dc.contributor.author Marí, B. es_ES
dc.date.accessioned 2019-06-07T20:05:54Z
dc.date.available 2019-06-07T20:05:54Z
dc.date.issued 2018 es_ES
dc.identifier.issn 0306-8919 es_ES
dc.identifier.uri http://hdl.handle.net/10251/121777
dc.description.abstract [EN] In this study CuInSe2 and CuInS2 thin films were prepared onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe2/CuInS2 showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. Mott-Schottky measurements were used to assess the conductivity type of the films and their carrier concentration. The prepared samples underwent an etching process to remove the binary accumulated Cu2-x(Se,S) phases shown in FESEM pictures. This etching process has shown a noticeable decrease in both, the flat band potencial, Vfb (V), and the number of acceptors, NA (cm-3) in selenized CuInSe2 and sulfurized CuInS2 samples. es_ES
dc.description.sponsorship This work was supported by the Culture Affairs and Missions Sector, Ministry of Higher Education and Scientific Research (Egypt) and Ministerio de Economia y Competitividad (ENE2016-77798-C4-2-R) and Generalitat valenciana (Prometeus 2014/044).
dc.language Inglés es_ES
dc.publisher Springer-Verlag es_ES
dc.relation.ispartof Optical and Quantum Electronics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject CuInSe2 es_ES
dc.subject CuInS2 es_ES
dc.subject Electrodeposition es_ES
dc.subject Mott-Schottky es_ES
dc.subject Solar Cells. es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Annealing study of electrodeposited CuInSe2 and CuInS2 thin films es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1007/s11082-018-1521-1 es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//ENE2016-77798-C4-2-R/ES/APROVECHAMIENTO DE LA LUZ SOLAR CON PROCESOS DE DOS FOTONES-TF/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//PROMETEOII%2F2014%2F044/ES/Técnicas de Fabricación Avanzada y Control de Calidad de nuevos materiales multifuncionales en movilidad sostenible/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.description.bibliographicCitation Saber, S.; Mollar García, MA.; El Nahrawy, A.; Khattab, N.; Eid, A.; Abo Ali, M.; Marí, B. (2018). Annealing study of electrodeposited CuInSe2 and CuInS2 thin films. Optical and Quantum Electronics. 50(6). https://doi.org/10.1007/s11082-018-1521-1 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://doi.org/10.1007/s11082-018-1521-1 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 50 es_ES
dc.description.issue 6 es_ES
dc.relation.pasarela S\363021 es_ES
dc.contributor.funder Generalitat Valenciana es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
dc.description.references Bhattacharya, R.N.: Solution growth and electrodeposited CuInSe2 thin films. J. Electrochem. Soc. 130, 2040–2042 (1983) es_ES
dc.description.references Calixto, M.E., Dobson, K.D., McCandless, B.E., Birkmire, R.W.: Controlling growth chemistry and morphology of single-bath electrodeposited Cu (In, Ga) Se2 thin films for photovoltaic application. J. Electrochem. Soc. 153(6), G521–G528 (2006) es_ES
dc.description.references Cao, Z., Yang, S., Wang, M., Huang, X., Li, H., Yi, J., Zhong, J.: Cu (In, Ga) S2 absorber layer prepared for thin film solar cell by electrodeposition of Cu-Ga precursor from deep eutectic solvent. Sol. Energy 139, 29–35 (2016) es_ES
dc.description.references Chraibi, F., Fahoume, M., Ennaoui, A., Delplancke, J.L.: Influence of citrate ions as complexing agent for electrodeposition of CuInSe2 thin films. Phys. Status Solidi A 186, 373–381 (2001) es_ES
dc.description.references Darowicki, K., Krakowiak, S., Slepski, P.: Selection of measurement frequency in Mott–Schottky analysis of passive layer on nickel. Electrochim. Acta 51, 2204–2208 (2006) es_ES
dc.description.references Delsol, T., Simmonds, M.C., Dharmadasa, I.M.: Chemical etching of Cu (In, Ga) Se2 layers for fabrication of electronic devices. Sol. Energy Mater. Sol. Cells 77, 331–339 (2003) es_ES
dc.description.references Dharmadasa, I.M., Chaure, N.B., Tolan, G.J., Samantilleke, A.P.: Development of p+, p, i, n, and n+-type CuInGaSe2 layers for applications in graded bandgap multilayer thin-film solar cells. J. Electrochem. Soc. 154(6), H466–H471 (2007) es_ES
dc.description.references Djellal, L., Omeiri, S., Bouguelia, A., Trari, M.: Photoelectrochemical hydrogen-evolution over p-type chalcopyrite CuInSe2. J. Alloy. Compd. 476, 584–589 (2009) es_ES
dc.description.references Durant, B.K., Parkinson, B.A.: Solar energy materials. Solar Cells 144, 586–591 (2016) es_ES
dc.description.references Friedfeld, R., Raffaelle, R.P., Mantovani, J.G.: Electrodeposition of CuInxGa1−xSe2 thin films. Sol. Energy Mater. Sol. Cells 58, 375–385 (1999) es_ES
dc.description.references Jaffe, J.E., Zunger, A.: Theory of the band-gap anomaly in AB C 2 chalcopyrite semiconductors. Phys. Rev. B 29, 1882–1906 (1984) es_ES
dc.description.references Jost, S., Hergert, F., Hock, R., Schulze, J., Kirbs, A., VoX, T., Purwins, M.: The formation of CuInSe2 thin film solar cell absorbers from electroplated precursors with varying selenium content. Sol. Energy Mater. Sol. Cells 91, 1669–1675 (2007a) es_ES
dc.description.references Jost, S., Hergert, F., Hock, R., Schulze, J., Kirbs, A., VoX, T., Purwins, M., Schmid, M.: Real-time investigations on the formation of CuInSe2 thin film solar cell absorbers from electrodeposited precursors. Sol. Energy Mater. Sol. Cells 91, 636–644 (2007b) es_ES
dc.description.references Kampman, A., Rechid, J., Raitzig, A., Wulff, S., Mihhailova, M., Thyen, R., Kalberlah, K.: Electrodeposition of CIGS on metal substrates. Mater. Res. Soc. Symp. Proc. 763, 323–328 (2003) es_ES
dc.description.references Li-Kao, Z.J., Naghavi, N., Erfurth, F., Guillemoles, J.F., Gérard, I., Etcheberry, A., Pelouard, J.L., Collin, S., Voorwinden, G., Lincot, D.: Towards ultrathin copper indium gallium diselenide solar cells: proof of concept study by chemical etching and gold back contact engineering. Prog. Photovolt. Res. Appl. 20(5), 582–587 (2012) es_ES
dc.description.references Lincot, D.: Electrodeposition of semiconductors. Thin Sold Films 487, 40–48 (2005) es_ES
dc.description.references Mandati, S., Sarada, B.V., Dey, S.R., Joshi, S.V.: Photoelectrochemistry of Cu (In, Ga) Se2 thin-films fabricated by sequential pulsed electrodeposition. J. Power Sources 273, 149–157 (2015) es_ES
dc.description.references Paire, M., Lombez, L., Guillemoles, J.F., Lincot, D.: Toward microscale Cu (In, Ga) Se2 solar cells for efficient conversion and optimized material usage: theoretical evaluation. J. Appl. Phys. 108, 034907 (2010) es_ES
dc.description.references Paire, M., Delbos, S., Vidal, J., Naghavi, N., Guillemoles, J.F.: Chalcogenide thin film solar cells. In: Willoughby, A., Conibeer, G.J. (eds.) Solar Cells Materials. Wiley, New York (2014) es_ES
dc.description.references Repins, I., Contreras, M.A., Egaas, B., DeHart, C., Scharf, J., Perkins, C.L., To, B., Noufi, R.: 19.9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor. Prog. Photovolt. Res. Appl. 16, 235–239 (2008) es_ES
dc.description.references Savadogo, O.: Chemically and electrochemically deposited thin films for solar energy materials. Solar Energy Mater. Solar Cells 52(3–4), 361–388 (1998) es_ES
dc.description.references Taunier, S., Sicx-Kurdi, J., Grand, P.P., Chomont, A., Ramdani, O., Parissi, L., Panheleux, P., Naghavi, N., Hubert, C., Ben-Farah, M., Fauvarque, J.P., Connolly, J., Roussel, O., Mogensen, P., Mahe, E., Guillemoles, J.F., Lincot, D., Kerrec, O.: Cu (In, Ga)(S, Se) 2 solar cells and modules by electrodeposition. Thin Solid Films 480, 526–531 (2005) es_ES
dc.description.references Zaghi, A.E., Buffière, M., Brammertz, G., Batuk, M., Lenaers, N., Kniknie, B., Hadermann, J., Meuris, M., Poortmans, J., Vleugels, J.: Mechanical synthesis of high purity Cu–In–Se alloy nanopowder as precursor for printed CISe thin film solar cells. Adv. Powder Technol. 25(4), 1254–1261 (2014) es_ES


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