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dc.contributor.author | Herranz, Gervasi | es_ES |
dc.contributor.author | Sanchis Kilders, Pablo | es_ES |
dc.date.accessioned | 2023-10-10T18:02:14Z | |
dc.date.available | 2023-10-10T18:02:14Z | |
dc.date.issued | 2019-07-15 | es_ES |
dc.identifier.issn | 0169-4332 | es_ES |
dc.identifier.uri | http://hdl.handle.net/10251/197951 | |
dc.description.abstract | [EN] At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore¿s law is approaching the insurmountable barrier given by the ultimate atomic nature of matter. A major challenge for 21st century scientists is finding novel strategies, concepts and materials for replacing silicon-based CMOS semiconductor technologies and guaranteeing a continued and steady technological progress in next decades. Among the materials classes candidate to contribute to this momentous challenge, oxide films and heterostructures are a particularly appealing hunting ground. The vastity, intended in pure chemical terms, of this class of compounds, the complexity of their correlated behaviour, and the wealth of functional properties they display, has already made these systems the subject of choice, worldwide, of a strongly networked, dynamic and interdisciplinary research community. | es_ES |
dc.description.sponsorship | Gervasi Herranz acknowledges financial support from MAT2014-56063-C2-1-R and Severo Ochoa SEV-2015-0496 Projects, and the Generalitat de Catalunya (2014 SGR 734Project). Pablo Sanchis acknowledges financial support from TEC2016-76849 and FP7-ICT-2013-11-619456 SITOGA. | es_ES |
dc.language | Inglés | es_ES |
dc.publisher | Elsevier | es_ES |
dc.relation.ispartof | Applied Surface Science | es_ES |
dc.rights | Reconocimiento - No comercial - Sin obra derivada (by-nc-nd) | es_ES |
dc.subject | Towards Oxide Electronics | es_ES |
dc.subject.classification | TEORÍA DE LA SEÑAL Y COMUNICACIONES | es_ES |
dc.title | Functional oxides in photonic integrated devices | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1016/j.apsusc.2019.03.312 | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/619456/EU | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/AEI//TEC2016-76849-C2-2-R//DESARROLLO DE OXIDOS METALICOS DE TRANSICION CON TECNOLOGIA DE SILICIO PARA APLICACIONES DE CONMUTACION E INTERCONEXION OPTICAS EFICIENTES Y RESPETUOSAS CON EL MEDIO AMBIENTE/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MINECO//MAT2014-56063-C2-1-R/ES/METALES Y OXIDOS PARA UNA ELECTRONICA SOSTENIBLE/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MINECO//SEV-2015-0496/ES/INSTITUTO DE CIENCIA DE MATERIALES DE BARCELONA ICMAB/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Escuela Técnica Superior de Ingenieros de Telecomunicación - Escola Tècnica Superior d'Enginyers de Telecomunicació | es_ES |
dc.description.bibliographicCitation | Herranz, G.; Sanchis Kilders, P. (2019). Functional oxides in photonic integrated devices. Applied Surface Science. 482:52-55. https://doi.org/10.1016/j.apsusc.2019.03.312 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | https://doi.org/10.1016/j.apsusc.2019.03.312 | es_ES |
dc.description.upvformatpinicio | 52 | es_ES |
dc.description.upvformatpfin | 55 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 482 | es_ES |
dc.relation.pasarela | S\384758 | es_ES |
dc.contributor.funder | European Commission | es_ES |
dc.contributor.funder | Generalitat de Catalunya | es_ES |
dc.contributor.funder | AGENCIA ESTATAL DE INVESTIGACION | es_ES |
dc.contributor.funder | Ministerio de Economía y Competitividad | es_ES |