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The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

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The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

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dc.contributor.author Trevisi, G. es_ES
dc.contributor.author Suárez, I. es_ES
dc.contributor.author Seravalli, L. es_ES
dc.contributor.author Rivas, D. es_ES
dc.contributor.author Frigeri, P. es_ES
dc.contributor.author Muñoz Matutano, Guillermo es_ES
dc.contributor.author Grillo, V. es_ES
dc.contributor.author Nasi, L. es_ES
dc.contributor.author Martínez-Pastor, J. es_ES
dc.date.accessioned 2014-11-25T09:15:53Z
dc.date.available 2014-11-25T09:15:53Z
dc.date.issued 2013-05-21
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10251/44784
dc.description.abstract [EN] The structural and morphological features of bimodal-sized InAs/(In) GaAs quantum dots with density in the low 10(9) cm(-2) range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and time-resolved photoluminescence. We show that only the family of small quantum dots (QDs) is able to emit narrow photoluminescence peaks characteristic of single-QD spectra; while the behavior of large QDs is attributed to large strain fields that may induce defects affecting their optical properties, decreasing the optical intensity and broadening the homogeneous linewidth. Then, by using a rate-equation model for the exciton recombination dynamics, we show that thermal population of dark states is inhibited in both QD families capped by high In content InGaAs layers. We discuss this behavior in terms of alloy disorder and increased density of point defects in the InGaAs pseudomorphic layer. es_ES
dc.description.sponsorship This work was supported through the Spanish MCINN and Generalitat Valenciana Grants Nos. TEC2011-29120-C05-01 and PROMETEO/2009/074, respectively, and by the 'SANDiE' Network of Excellence of EC, Contract No. NMP4-CT-2004-500101. AFM measurements were carried out at CIM-Parma University.
dc.language Inglés es_ES
dc.publisher American Institute of Physics (AIP) es_ES
dc.relation.ispartof Journal of Applied Physics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Carrier transfer es_ES
dc.subject Mu-m es_ES
dc.subject Well es_ES
dc.subject Photoluminescence es_ES
dc.subject Luminescence es_ES
dc.subject Evolution es_ES
dc.subject Emission es_ES
dc.subject Dynamics es_ES
dc.subject Islands es_ES
dc.subject Escape es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1063/1.4805351
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//TEC2011-29120-C05-01/ES/PUNTOS CUANTICOS SEMICONDUCTORES COMO CLAVE PARA FUTURAS TECNOLOGIAS: DE LA NANOFOTONICA A LA NANOPLASMONICA/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/EC/FP6/500101/EU/Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics/SANDIE/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//PROMETEO09%2F2009%2F074/ES/Nanotecnología y Nanomateriales para la Conversión Solar Fotovoltaica/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Trevisi, G.; Suárez, I.; Seravalli, L.; Rivas, D.; Frigeri, P.; Muñoz Matutano, G.; Grillo, V.... (2013). The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots. Journal of Applied Physics. 113(19):1943061-1943068. https://doi.org/10.1063/1.4805351 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1063/1.4805351 es_ES
dc.description.upvformatpinicio 1943061 es_ES
dc.description.upvformatpfin 1943068 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 113 es_ES
dc.description.issue 19 es_ES
dc.relation.senia 255067
dc.contributor.funder Ministerio de Ciencia e Innovación
dc.contributor.funder Generalitat Valenciana
dc.contributor.funder European Commission
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