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HgGa2Se4 under high pressure: an optical absorption study

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HgGa2Se4 under high pressure: an optical absorption study

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dc.contributor.author Gomis, O. es_ES
dc.contributor.author Vilaplana Cerda, Rosario Isabel es_ES
dc.contributor.author Manjón Herrera, Francisco Javier es_ES
dc.contributor.author Ruiz-Fuertes, Javier es_ES
dc.contributor.author Pérez-González, E. es_ES
dc.contributor.author López-Solano, J. es_ES
dc.contributor.author Bandiello, E. es_ES
dc.contributor.author Errandonea, Daniel es_ES
dc.contributor.author Segura, Alfredo es_ES
dc.contributor.author Rodríguez-Hernández, Placida es_ES
dc.contributor.author Muñoz, A. es_ES
dc.contributor.author Ursaki, Veacheslav es_ES
dc.contributor.author Tiginyanu, Ivan M. es_ES
dc.date.accessioned 2016-07-13T10:28:17Z
dc.date.available 2016-07-13T10:28:17Z
dc.date.issued 2015-09
dc.identifier.issn 0370-1972
dc.identifier.uri http://hdl.handle.net/10251/67538
dc.description.abstract High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order-disorder processes that occur in this ordered-vacancy compound. Two different experiments have been carried out in which the sample undergoes either a partial or a total pressure-induced disorder process at 15.4 and 30.8GPa, respectively. It has been found that the direct bandgap energies of the recovered samples at 1GPa were around 0.15 and 0.23eV smaller than that of the original sample, respectively, and that both recovered samples have different pressure coefficients of the direct bandgap than the original sample. A comprehensive explanation for these results on the basis of pressure-induced order-disorder processes is provided. es_ES
dc.description.sponsorship This study was supported by the Spanish government MEC under Grants No: MAT2010-21270-C04-01/03/04 and MAT2013-46649-C4-1/2/3-P, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), by Generalitat Valenciana (GVA-ACOMP-2013-1012 and GVA-ACOMP-2014-243), and by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E. P.-G., J. L.-S., P. R.-H, and A. M. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. J.R.-F. thanks the Alexander von Humboldt foundation for a postdoctoral fellowship. en_EN
dc.language Inglés es_ES
dc.publisher Wiley es_ES
dc.relation.ispartof physica status solidi (b) es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Bandgap energy es_ES
dc.subject Defect chalcopyrite es_ES
dc.subject High pressure es_ES
dc.subject Optical properties es_ES
dc.subject Order-disorder transitions es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title HgGa2Se4 under high pressure: an optical absorption study es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1002/pssb.201451714
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//MAT2013-46649-C4-2-P/ES/OXIDOS METALICOS ABO3 EN CONDICIONES EXTREMAS/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//ACOMP%2F2013%2F012/ES/Crecimiento y Caracterizacion de Nanocristales de Oxidos Metalicos Bajo Altas Presiones/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-03/ES/MATERIALES, NANOMATERIALES Y AGREGRADOS BAJO CONDICIONES EXTREMAS. PROPIEDADES ELECTRONICAS Y DINAMICAS DESDE METODOS AB INITIO/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//MAT2013-46649-C4-3-P/ES/ESTUDIO AB INITIO DE OXIDO METALICOS, MATERIALES Y NANOMATERIALES BAJO CONDICIONES EXTREMAS/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-01/ES/SINTESIS Y CARACTERIZACION OPTICA, ELECTRONICA, ESTRUCTURAL Y VIBRACIONAL DE NUEVOS MATERIALES BAJO CONDICIONES EXTREMAS DE PRESION Y TEMPERATURA/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//MAT2013-46649-C4-1-P/ES/ORTOVANADATOS BAJO CONDICIONES EXTREMAS: SINTESIS Y CARACTERIZACION DE MATERIALES EN VOLUMEN Y NANOCRISTALES CON APLICACIONES TECNOLOGICAS/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//ACOMP%2F2014%2F243/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/UPV//PAID-05-11-UPV2011-0914/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/UPV//PAID-06-11-UPV2011-0966/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.description.bibliographicCitation Gomis, O.; Vilaplana Cerda, RI.; Manjón Herrera, FJ.; Ruiz-Fuertes, J.; Pérez-González, E.; López-Solano, J.; Bandiello, E.... (2015). HgGa2Se4 under high pressure: an optical absorption study. physica status solidi (b). 252(9):2043-2051. https://doi.org/10.1002/pssb.201451714 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1002/pssb.201451714 es_ES
dc.description.upvformatpinicio 2043 es_ES
dc.description.upvformatpfin 2051 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 252 es_ES
dc.description.issue 9 es_ES
dc.relation.senia 297729 es_ES
dc.contributor.funder Ministerio de Educación y Ciencia es_ES
dc.contributor.funder Ministerio de Ciencia e Innovación es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
dc.contributor.funder Universitat Politècnica de València es_ES
dc.contributor.funder Generalitat Valenciana es_ES
dc.contributor.funder Alexander von Humboldt Foundation es_ES
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