Díaz-Calleja, R.; García Bernabé, A.; Sanchis Sánchez, MJ.; Del Castillo, L. (2000). Memory function on dielectric relaxation. The Journal of Chemical Physics. 113(24):11258-11263. https://doi.org/10.1063/1.1326913
Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/113042
Title:
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Memory function on dielectric relaxation
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Author:
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Díaz-Calleja, R.
García Bernabé, Abel
Sanchis Sánchez, María Jesús
del Castillo, L.F.
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UPV Unit:
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Universitat Politècnica de València. Departamento de Termodinámica Aplicada - Departament de Termodinàmica Aplicada
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Issued date:
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Abstract:
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[EN] The second-order memory function ~SOMF! for the dicyclohexylmetyl-2metyl succinate is obtained
by using simple numerical manipulation of the experimental dielectric data. According to the
prescription given in a ...[+]
[EN] The second-order memory function ~SOMF! for the dicyclohexylmetyl-2metyl succinate is obtained
by using simple numerical manipulation of the experimental dielectric data. According to the
prescription given in a previous paper @J. Chem. Phys. 109, 9057 ~1998!#, the frequency behavior of
the real and imaginary parts of the SOMF is discussed in terms of the Havriliak-Negami equation
of the dielectric function, and together with the three-variable model describing the evolution of the
torque-autocorrelation function. Furthermore, in this paper we present the temperature dependence
of the parameters, which characterize the SOMF behavior for two ester substances. © 2000
American Institute of Physics. @S0021-9606~00!51048-4#
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Subjects:
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Dielectrics
,
Dielectric function
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Real functions
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Dielectric relaxation
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Copyrigths:
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Reserva de todos los derechos
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Source:
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The Journal of Chemical Physics. (issn:
0021-9606
)
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DOI:
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10.1063/1.1326913
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Publisher:
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American Institute of Physics
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Publisher version:
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https://doi.org/10.1063/1.1326913
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Project ID:
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info:eu-repo/grantAgreement/MECD//MAT1999-1127-C04-03/ES/DESARROLLO Y PROPIEDADES DE NUEVOS MATERIALES BARRERA CON USO POTENCIAL EN SEPARACION DE GASES, IONES/
info:eu-repo/grantAgreement/UNAM//IN119200/
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Thanks:
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This work was supported in part by the UPV. One of the authors L. F del C. wishes to thank DGAPA-UNAM for support from Grant No. IN119200. Authors of the UPV also thank the Science and Technology Office of Spain for Grant ...[+]
This work was supported in part by the UPV. One of the authors L. F del C. wishes to thank DGAPA-UNAM for support from Grant No. IN119200. Authors of the UPV also thank the Science and Technology Office of Spain for Grant No. MAT 1999-1127-C04-03.
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Type:
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Artículo
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