Mostrar el registro sencillo del ítem
dc.contributor.author | Esteve-Adell, Iván | es_ES |
dc.contributor.author | He, Jinbao | es_ES |
dc.contributor.author | Ramiro Manzano, Fernando | es_ES |
dc.contributor.author | Atienzar Corvillo, Pedro Enrique | es_ES |
dc.contributor.author | Primo Arnau, Ana Maria | es_ES |
dc.contributor.author | García Gómez, Hermenegildo | es_ES |
dc.date.accessioned | 2019-06-07T20:04:37Z | |
dc.date.available | 2019-06-07T20:04:37Z | |
dc.date.issued | 2018 | es_ES |
dc.identifier.issn | 2040-3364 | es_ES |
dc.identifier.uri | http://hdl.handle.net/10251/121758 | |
dc.description.abstract | [EN] A procedure for the one-step preparation of films of few-layer N-doped graphene on top of nanometric hexagonal boron nitride sheets ((N)graphene/h-BN) based on the pyrolysis at 900 degrees C under an inert atmosphere of a film of chitosan containing about 20 wt% of ammonium borate salt as a precursor is reported. During the pyrolysis a spontaneous segregation of (N)graphene and boron nitride layers takes place. The films were characterized by optical microscopy that shows a thin graphene overlayer covering the boron nitride layer, the latter showing characteristic cracks, and by XPS measurements at different monitoring angles from 0 degrees to 50 degrees where an increase in the proportion of C vs. B and N was observed. The resulting (N)graphene/h-BN films were also characterized by Raman, HRTEM, SEM, FIB-SEM and AFM. The thickness of the (N)graphene and h-BN layers can be controlled by varying the concentration of precursors and the spin coating rate and is typically below 5 nm. Electrical conductivity measurements using microelectrodes can cause the burning of the graphene layer at high intensities, while lower intensities show that (N)graphene/h-BN films behave as capacitors in the range of positive voltages. | es_ES |
dc.description.sponsorship | Financial support from the Spanish Ministry of Economy and Competitiveness (Severo Ochoa, CTQ2015-69154-CO2-R1 and Grapas) is gratefully acknowledged. A. P. thanks also the Spanish Ministry of Economy and Competitiveness for a Ramon y Cajal research associate contract. Financial support from the Fundacion Ramon Areces (XVII Concurso Nacional para la adjudicacion de Ayudas a la Investigacion en Ciencias de la Vida y de la Materia) is also acknowledged. J. H. thanks the Chinese Scholarship Council (CSC) for supporting his PhD studies at Valencia. | es_ES |
dc.language | Inglés | es_ES |
dc.publisher | The Royal Society of Chemistry | es_ES |
dc.relation.ispartof | Nanoscale | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject.classification | QUIMICA ORGANICA | es_ES |
dc.title | Catalyst-free one step synthesis of large area vertically stacked N-doped graphene-boron nitride heterostructures from biomass source | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1039/c7nr08424b | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MINECO//CTQ2015-69153-C2-1-R/ES/EXPLOTANDO EL USO DEL GRAFENO EN CATALISIS. USO DEL GRAFENO COMO CARBOCATALIZADOR O COMO SOPORTE/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Química - Departament de Química | es_ES |
dc.description.bibliographicCitation | Esteve-Adell, I.; He, J.; Ramiro Manzano, F.; Atienzar Corvillo, PE.; Primo Arnau, AM.; García Gómez, H. (2018). Catalyst-free one step synthesis of large area vertically stacked N-doped graphene-boron nitride heterostructures from biomass source. Nanoscale. 10(9):4391-4397. https://doi.org/10.1039/c7nr08424b | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://doi.org/10.1039/c7nr08424b | es_ES |
dc.description.upvformatpinicio | 4391 | es_ES |
dc.description.upvformatpfin | 4397 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 10 | es_ES |
dc.description.issue | 9 | es_ES |
dc.identifier.pmid | 29450410 | |
dc.relation.pasarela | S\382643 | es_ES |
dc.contributor.funder | Ministerio de Economía y Empresa | es_ES |