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Annealing study of electrodeposited CuInSe2 and CuInS2 thin films

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Annealing study of electrodeposited CuInSe2 and CuInS2 thin films

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dc.contributor.author Saber, Suzan es_ES
dc.contributor.author Mollar García, Miguel Alfonso es_ES
dc.contributor.author El Nahrawy, Amany es_ES
dc.contributor.author Khattab, Nagwa es_ES
dc.contributor.author Eid, Ali es_ES
dc.contributor.author Abo Ali, Mohamed es_ES
dc.contributor.author Marí, B. es_ES
dc.date.accessioned 2019-06-07T20:05:54Z
dc.date.available 2019-06-07T20:05:54Z
dc.date.issued 2018 es_ES
dc.identifier.issn 0306-8919 es_ES
dc.identifier.uri http://hdl.handle.net/10251/121777
dc.description.abstract [EN] In this study CuInSe2 and CuInS2 thin films were prepared onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe2/CuInS2 showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. Mott-Schottky measurements were used to assess the conductivity type of the films and their carrier concentration. The prepared samples underwent an etching process to remove the binary accumulated Cu2-x(Se,S) phases shown in FESEM pictures. This etching process has shown a noticeable decrease in both, the flat band potencial, Vfb (V), and the number of acceptors, NA (cm-3) in selenized CuInSe2 and sulfurized CuInS2 samples. es_ES
dc.description.sponsorship This work was supported by the Culture Affairs and Missions Sector, Ministry of Higher Education and Scientific Research (Egypt) and Ministerio de Economia y Competitividad (ENE2016-77798-C4-2-R) and Generalitat valenciana (Prometeus 2014/044).
dc.language Inglés es_ES
dc.publisher Springer-Verlag es_ES
dc.relation.ispartof Optical and Quantum Electronics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject CuInSe2 es_ES
dc.subject CuInS2 es_ES
dc.subject Electrodeposition es_ES
dc.subject Mott-Schottky es_ES
dc.subject Solar Cells. es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Annealing study of electrodeposited CuInSe2 and CuInS2 thin films es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1007/s11082-018-1521-1 es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//ENE2016-77798-C4-2-R/ES/APROVECHAMIENTO DE LA LUZ SOLAR CON PROCESOS DE DOS FOTONES-TF/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//PROMETEOII%2F2014%2F044/ES/Técnicas de Fabricación Avanzada y Control de Calidad de nuevos materiales multifuncionales en movilidad sostenible/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.description.bibliographicCitation Saber, S.; Mollar García, MA.; El Nahrawy, A.; Khattab, N.; Eid, A.; Abo Ali, M.; Marí, B. (2018). Annealing study of electrodeposited CuInSe2 and CuInS2 thin films. Optical and Quantum Electronics. 50(6). https://doi.org/10.1007/s11082-018-1521-1 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://doi.org/10.1007/s11082-018-1521-1 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 50 es_ES
dc.description.issue 6 es_ES
dc.relation.pasarela S\363021 es_ES
dc.contributor.funder Generalitat Valenciana es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
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