Bouhjar, F.; Mollar García, MA.; Chourou, M.; Marí, B.; Bessais, B. (2018). Hydrothermal synthesis of nanostructured Cr-doped hematite with enhanced photoelectrochemical activity. Electrochimica Acta. 260:838-846. https://doi.org/10.1016/j.electacta.2017.12.049
Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/122554
Title:
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Hydrothermal synthesis of nanostructured Cr-doped hematite with enhanced photoelectrochemical activity
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Author:
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Bouhjar, Feriel
Mollar García, Miguel Alfonso
Chourou, M.L.
Marí, B.
Bessais, Brahim
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UPV Unit:
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Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada
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Issued date:
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Abstract:
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[EN] Using the easily applicable hydrothermal method Cr-doped hematite thin films have been deposited polycrystalline on conductive glass substrates. The hydrothermal bath consisted of an aqueous solution containing a ...[+]
[EN] Using the easily applicable hydrothermal method Cr-doped hematite thin films have been deposited polycrystalline on conductive glass substrates. The hydrothermal bath consisted of an aqueous solution containing a mixture of FeCl3.6H(2)O and NaNO3 at pH = 1.5. The samples were introduced in an autoclave and heated for a fixed time at a fixed temperature and then annealed in air at 550 degrees C. The concentration of the incorporated Cr atoms (Cr4+ ions) was controlled by varying the concentration of the Cr(ClO4)(3) precursor solution, varied from 0% to 20%. All samples followed morphological and structural studies using field-emission scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. Chronoamperometry measurements showed that Cr-doped hematite films exhibited higher photoelectrochemical activity than the undoped films. The maximum photocurrent density and incident photon conversion efficiencies (IPCE) were obtained for 16 at.% Cr-doped films. This high photoactivity can be attributed to both the large active surface area and increased donor density caused by Cr-doping in the alpha-Fe2O3 films. All samples reached their best IPCE at 400 nm. IPCE values for 16 at.% Cr-doped hematite films were thirty times higher than that of undoped samples. This high photoelectrochemical performance of Cr-doped hematite films is mainly attributed to an improvement in charge carrier properties. (C) 2017 Elsevier Ltd. All rights reserved.
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Subjects:
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Thin films
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Hematite
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Chromium
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XRD analysis
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FESEM analysis
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TEM analysis
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Optical properties
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Photoelectrochemical properties
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Copyrigths:
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Reconocimiento - No comercial - Sin obra derivada (by-nc-nd)
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Source:
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Electrochimica Acta. (issn:
0013-4686
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DOI:
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10.1016/j.electacta.2017.12.049
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Publisher:
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Elsevier
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Publisher version:
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https://doi.org/10.1016/j.electacta.2017.12.049
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Project ID:
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AEI/ENE2016-77798-C4-2-R
GV/PROMETEOII/2014/044
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Thanks:
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This work was supported by the Ministry of Higher Education and Scientific Research, Tunisia and Ministerio de Economia y Competitividad (ENE2016-77798-C4-2-R) and Generalitat Valenciana (Prometeus 2014/044).
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Type:
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Artículo
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