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Thermo-optic coefficient of porous silicon in the infrared region and oxidation process at low temperatures

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Thermo-optic coefficient of porous silicon in the infrared region and oxidation process at low temperatures

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Martín-Sánchez, D.; Kovylina, M.; Ponce-Alcántara, S.; García-Rupérez, J. (2019). Thermo-optic coefficient of porous silicon in the infrared region and oxidation process at low temperatures. Journal of The Electrochemical Society. 166(6):B355-B359. https://doi.org/10.1149/2.0341906jes

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/140878

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Title: Thermo-optic coefficient of porous silicon in the infrared region and oxidation process at low temperatures
Author: Martín-Sánchez, David Kovylina, Miroslavna Ponce-Alcántara, Salvador García-Rupérez, Jaime
UPV Unit: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Issued date:
Abstract:
[EN] In this work, a porous silicon nanostructure has been fabricated by electrochemical means and used as a thermal sensor. The thermo-optic effect in the near infrared region has been experimentally studied based on ...[+]
Subjects: Porous silicon , Thermo-optic coefficient , Thermal sensor , Oxidation process
Copyrigths: Reconocimiento (by)
Source:
Journal of The Electrochemical Society. (issn: 0013-4651 )
DOI: 10.1149/2.0341906jes
Publisher:
The Electrochemical Society
Publisher version: https://doi.org/10.1149/2.0341906jes
Project ID:
info:eu-repo/grantAgreement/MINECO//TEC2015-63838-C3-1-R/ES/DETECCION DE TOXINAS Y AGENTES PATOGENOS MEDIANTE BIOSENSORES OPTICOS NANOMETRICOS PARA AMENAZAS NBQ/
Thanks:
The authors acknowledge the funding from the Spanish government through the project TEC2015-63838-C3-1-R-OPTONANOSENS.
Type: Artículo

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