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Wideband Transition for Increased-Height Empty Substrate Integrated Waveguide

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Martínez-Zamora, JÁ.; Belenguer Martínez, A.; De Dios, JJ.; Esteban González, H.; Boria Esbert, VE. (2019). Wideband Transition for Increased-Height Empty Substrate Integrated Waveguide. IEEE Access. 7:149406-149413. https://doi.org/10.1109/ACCESS.2019.2947215

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/144222

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Title: Wideband Transition for Increased-Height Empty Substrate Integrated Waveguide
Author: Martínez-Zamora, Juan Ángel BELENGUER MARTÍNEZ, ANGEL de Dios, Juan J. Esteban González, Héctor Boria Esbert, Vicente Enrique
UPV Unit: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Issued date:
[EN] Recently, Empty Substrate Integrated Waveguide (ESIW) technology was proposed for embedding empty waveguides into planar substrates in order to improve their performance. A low-loss and narrow-band transition from ...[+]
Subjects: Rectangular waveguides , Substrates , Impedance , Waveguide transitions , Wideband , Cutoff frequency , Microstrip , Empty substrate integrated waveguide , ESIW , High quality factor , Microstrip transition , Multilayer , Substrate integrated circuit , SIC , Substrate integrated waveguide , SIW
Copyrigths: Reconocimiento (by)
IEEE Access. (eissn: 2169-3536 )
DOI: 10.1109/ACCESS.2019.2947215
Institute of Electrical and Electronics Engineers
Publisher version: https://doi.org/10.1109/ACCESS.2019.2947215
Project ID:
Description: (c) 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
This work was supported in part by the Ministerio de Economia y Competitividad, Spanish Government, under Project TEC2016-75934-C4-3-R and Project TEC2016-75934-C4-1-R, and in part by the Consejeria de Educacion, Cultura ...[+]
Type: Artículo



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