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Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances

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Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances

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dc.contributor.author Fenollosa Esteve, Roberto es_ES
dc.contributor.author Ramiro-Manzano, Fernando es_ES
dc.contributor.author GARÍN ESCRIVÁ, MOISÉS es_ES
dc.contributor.author Alcubilla, R. es_ES
dc.date.accessioned 2020-09-24T12:28:55Z
dc.date.available 2020-09-24T12:28:55Z
dc.date.issued 2019-12-18 es_ES
dc.identifier.uri http://hdl.handle.net/10251/150637
dc.description.abstract [EN] Planck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes drastically, however, when the size of the emitting object is comparable to the wavelength of the emitted radiation. Here we show that a silicon microsphere (2-3 mu m in diameter) heated to around 800 degrees C yields a thermal emission spectrum consisting of pronounced peaks that are associated with Mie resonances. We experimentally demonstrate in the near-infrared the existence of modes with an ultrahigh quality factor, Q, of 400, which is substantially higher than values reported so far, and set a new benchmark in the field of thermal emission. Simulations predict that the thermal response of the microspheres is very fast, about 15 mu s. Additionally, the possibility of achieving light emission above the Planck limit at some frequency ranges is envisaged. es_ES
dc.description.sponsorship This work was supported by several projects of the Spanish Ministry of Economy and Competitiveness (MINECO), Severo Ochoa program for Centers of Excellence (SEV-2016-0683), MAT2015-69669-PM, ENE2013-49984-EXP, ENE2015-74009-JIN (cofunded by the European Regional Development Fund), and of the Spanish Science, Innovation and Universities, PGC2018-099744-B-100. F.R.-M. thanks the financial contribution of MINECO through the program for young researchers support, TEC 2015 2015-74405-JIN. The authors greatly acknowledge the contribution of Prof. Francisco Meseguer for both the fruitful discussions and the revision of the manuscript, and Prof. Marie Louise McCarrey for careful proofreading of the manuscript. es_ES
dc.language Inglés es_ES
dc.publisher American Chemical Society es_ES
dc.relation.ispartof ACS Photonics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Microsphere es_ES
dc.subject Silicon es_ES
dc.subject Nanocavity es_ES
dc.subject Whispering gallery modes es_ES
dc.subject Super-Planckian es_ES
dc.subject Light source es_ES
dc.title Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1021/acsphotonics.9b01513 es_ES
dc.relation.projectID info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PGC2018-099744-B-I00/ES/AMPLIFICACION DE LOS FENOMENOS OPTOELECTRONICOS EN MICROCAVIDADES/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//MAT2015-69669-P/ES/OPTOLECTRONICA EN NANOCAVIDADES DE ALTO INDICE DE REFRACCION. DEL SILICIO A LA PEROVSKITA/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//TEC2015-74405-JIN/ES/MICRO- Y NANO-CAVIDADES BASADAS EN PEROVSKITA HALOGENADA. CELULAS SOLARES Y EMISORES DE LUZ/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//ENE2013-49984-EXP/ES/SUPERANDO EL CUERPO NEGRO. ABSORCION Y EMISION DE LUZ EN UNA MICROESFERA DE SILICIO./ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//ENE2015-74009-JIN/ES/HACIA LA OBTENCION DE MULTIPLES CELULAS MONOCRISTALINAS DE SILICIO CON 20% DE EFICIENCIA Y MENOS DE 20 µM DE GROSOR A PARTIR DE UNA UNICA OBLEA./ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MINECO//SEV-2016-0683/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química es_ES
dc.description.bibliographicCitation Fenollosa Esteve, R.; Ramiro-Manzano, F.; Garín Escrivá, M.; Alcubilla, R. (2019). Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances. ACS Photonics. 6(12):3174-3179. https://doi.org/10.1021/acsphotonics.9b01513 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://doi.org/10.1021/acsphotonics.9b01513 es_ES
dc.description.upvformatpinicio 3174 es_ES
dc.description.upvformatpfin 3179 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 6 es_ES
dc.description.issue 12 es_ES
dc.identifier.eissn 2330-4022 es_ES
dc.relation.pasarela S\404618 es_ES
dc.contributor.funder European Regional Development Fund es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
dc.contributor.funder Agencia Estatal de Investigación es_ES


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