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Improved low reflection transition from microstrip line to empty substrate integrated waveguide

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Improved low reflection transition from microstrip line to empty substrate integrated waveguide

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dc.contributor.author Esteban González, Héctor es_ES
dc.contributor.author Belenguer, Ángel es_ES
dc.contributor.author Sánchez-Marín, Juan Rafael es_ES
dc.contributor.author Bachiller Martin, Maria Carmen es_ES
dc.contributor.author Boria Esbert, Vicente Enrique es_ES
dc.date.accessioned 2020-10-07T03:34:22Z
dc.date.available 2020-10-07T03:34:22Z
dc.date.issued 2017-08 es_ES
dc.identifier.issn 1531-1309 es_ES
dc.identifier.uri http://hdl.handle.net/10251/151292
dc.description "© 2017 IEEE. Personal use of this material is permitted. Permissíon from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertisíng or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works." es_ES
dc.description.abstract [EN] Substrate-integrated waveguides (SIWs) maintain the advantages of planar circuits (low loss, low profile, easy manufacturing, and integration in a planar circuit board) and improve the quality factor of filter resonators. Empty substrateinte-grated waveguides (ESIWs) substantially reduce the insertion losses, because waves propagate through air instead of a lossy dielectric. The first ESIW used a simple tapering transition that cannot be used for thin substrates. A new transition has recently been proposed, which includes a taper also in the microstrip line, not only inside the ESIW, and so it can be used for all substrates, although measured return losses are only 13 dB. In this letter, the cited transition is improved by placing via holes that prevent undesired radiation, as well as two holes that help to ensure good accuracy in the mechanization of the input iris, thus allowing very good return losses (over 20 dB) in the measured results. A design procedure that allows the successful design of the proposed new transition is also provided. A back-to-back configuration of the improved new transition has been successfully manufactured and measured. es_ES
dc.description.sponsorship This work was supported in part by the Ministerio de Economia y Competitividad, Spanish Goverment, under Grant TEC2013-47037-C05-3-R and Grant TEC2013-47037-C05-1-R, and in part by the Ministerio de Educacion, Cultura y Deporte under the Fellowship Program for Training University Professors under Grant FPU14/00150. es_ES
dc.language Inglés es_ES
dc.publisher Institute of Electrical and Electronics Engineers es_ES
dc.relation MINECO/TEC2016-75934-C4-1-R es_ES
dc.relation MINECO/TEC2013-47037-C5-1-R es_ES
dc.relation MINECO/TEC2013-47037-C5-3-R es_ES
dc.relation MECD/FPU14/00150 es_ES
dc.relation GENERALITAT VALENCIANA/PROMETEOII/2015/005 es_ES
dc.relation.ispartof IEEE Microwave and Wireless Components Letters es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Empty substrate-integrated waveguide (ESIW) es_ES
dc.subject Planar circuits es_ES
dc.subject Substrate-integrated waveguide (SIW) es_ES
dc.subject Tapering structures es_ES
dc.subject Transition es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title Improved low reflection transition from microstrip line to empty substrate integrated waveguide es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1109/LMWC.2017.2724011 es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Esteban González, H.; Belenguer, Á.; Sánchez-Marín, JR.; Bachiller Martin, MC.; Boria Esbert, VE. (2017). Improved low reflection transition from microstrip line to empty substrate integrated waveguide. IEEE Microwave and Wireless Components Letters. 27(8):685-687. https://doi.org/10.1109/LMWC.2017.2724011 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion https://doi.org/10.1109/LMWC.2017.2724011 es_ES
dc.description.upvformatpinicio 685 es_ES
dc.description.upvformatpfin 687 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 27 es_ES
dc.description.issue 8 es_ES
dc.relation.pasarela S\341272 es_ES
dc.contributor.funder GENERALITAT VALENCIANA es_ES
dc.contributor.funder Ministerio de Economía y Competitividad es_ES
dc.contributor.funder Ministerio de Educación, Cultura y Deporte es_ES


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