Mostrar el registro sencillo del ítem
dc.contributor.author | Khattak, Yousaf Hameed | es_ES |
dc.contributor.author | Baig, Faisal | es_ES |
dc.contributor.author | Toura, Hanae | es_ES |
dc.contributor.author | Harabi, Imen | es_ES |
dc.contributor.author | Beg, Saira | es_ES |
dc.contributor.author | Marí, B. | es_ES |
dc.date.accessioned | 2020-12-11T04:33:18Z | |
dc.date.available | 2020-12-11T04:33:18Z | |
dc.date.issued | 2019-12-15 | es_ES |
dc.identifier.issn | 0169-4332 | es_ES |
dc.identifier.uri | http://hdl.handle.net/10251/156843 | |
dc.description.abstract | [EN] The high absorption coefficient and direct optical band gap of a kesterite Cu2ZnSnS4 (CZTS) makes it very promising absorber material in the manufacturing of high efficiency and low-cost thin film photovoltaic cells. Single step electrochemical deposition of CZTS quaternary compound thin films on Indium tin oxide (ITO) substrates is reported in this work. The films were obtained from aqueous solutions at room temperature. The key objective of this work is to examine the effect of annealing temperature on CZTS thin films. Sulfurization of thin films was performed under different temperature range from 400 degrees C to 550 degrees C. Good crystal structure was achieved at temperature 500 degrees C with the complexing agent of trisodium citrate. Deposited films material composition was evaluated by analyzing UV-visible spectroscopy, EDS, FE-SEM and XRD. The thin film with good morphological, structural and optical (1.51 eV) properties was achieved at temperature 500 degrees C. The results reported in this work will provide an imperative guideline for efficient low-cost design of CZTS thin films. | es_ES |
dc.description.sponsorship | This work was supported by Ministerio de Economia y Competitividad (ENE2016-77798-C4-2-R) and Generalitat Valenciana (Prometeus 2014/044) | es_ES |
dc.language | Inglés | es_ES |
dc.publisher | Elsevier | es_ES |
dc.relation.ispartof | Applied Surface Science | es_ES |
dc.rights | Reconocimiento - No comercial - Sin obra derivada (by-nc-nd) | es_ES |
dc.subject | Cu2ZnSnS4 | es_ES |
dc.subject | CZTS | es_ES |
dc.subject | Kesterite | es_ES |
dc.subject | Solar cell | es_ES |
dc.subject | Electrochemical deposition | es_ES |
dc.subject | Photovoltaics | es_ES |
dc.subject.classification | FISICA APLICADA | es_ES |
dc.title | Single step electrochemical deposition for the fabrication of CZTS kesterite thin films for solar cells | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1016/j.apsusc.2019.143794 | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/GVA//PROMETEOII%2F2014%2F044/ES/Técnicas de Fabricación Avanzada y Control de Calidad de nuevos materiales multifuncionales en movilidad sostenible/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MINECO//ENE2016-77798-C4-2-R/ES/APROVECHAMIENTO DE LA LUZ SOLAR CON PROCESOS DE DOS FOTONES-TF/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada | es_ES |
dc.description.bibliographicCitation | Khattak, YH.; Baig, F.; Toura, H.; Harabi, I.; Beg, S.; Marí, B. (2019). Single step electrochemical deposition for the fabrication of CZTS kesterite thin films for solar cells. Applied Surface Science. 497:1-7. https://doi.org/10.1016/j.apsusc.2019.143794 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | https://doi.org/10.1016/j.apsusc.2019.143794 | es_ES |
dc.description.upvformatpinicio | 1 | es_ES |
dc.description.upvformatpfin | 7 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 497 | es_ES |
dc.relation.pasarela | S\393990 | es_ES |
dc.contributor.funder | Generalitat Valenciana | es_ES |
dc.contributor.funder | Ministerio de Economía y Competitividad | es_ES |
dc.subject.ods | 07.- Asegurar el acceso a energías asequibles, fiables, sostenibles y modernas para todos | es_ES |