Numerical analysis of a novel CNT/Cu2O/Sb2Se /In2S3/ITO antimony selenide solar cell

Abstract

[EN] Sb2Se3 antimony selenide is a great potential for solar cell commercial application with good absorption coefficient and optimal band gap. In recent years the maximum power conversion efficiency (PCE) achieved from Sb2Se3 is about 6.5% with CNT/PbS/Sb2Se3/CdS/ITO structure. In this structure PbS works as hole transport material (HTM), CdS as buffer layer and Au as back contact. But the toxic nature of (Cd, Pb) and high cost of Au contact it cannot be considered for commercial application. Because of this reason for the first-time alternate solar cell structure with Cu2O as HTM layer, In2S3 as buffer layer and carbon nano tube (CNT) electrode used as a back contact is proposed in this work for Sb2Se3. Device modeling for solar cell with structure CNT/Cu2O/Sb2Se3/In2S3/ITO was performed in solar cell capacitance simulator (SCAPS). After optimization of physical parameters like absorber thickness, acceptor doping of absorber layer, donor doping of buffer and replacing CdS buffer layer with In2S3 efficiency of experimentally designed cell jumped from 6.5% to 13.20%.