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Thermal and Structural Transient Modelling of Plasma Process for Silicon Carbide

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Thermal and Structural Transient Modelling of Plasma Process for Silicon Carbide

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Abad Peñas, R. (2013). Thermal and Structural Transient Modelling of Plasma Process for Silicon Carbide. http://hdl.handle.net/10251/182026

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/182026

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Title: Thermal and Structural Transient Modelling of Plasma Process for Silicon Carbide
Author: Abad Peñas, Rafael
Director(s): Hoyas Calvo, Sergio
UPV Unit: Universitat Politècnica de València. Escuela Técnica Superior de Ingeniería del Diseño - Escola Tècnica Superior d'Enginyeria del Disseny
Read date / Event date:
2013-09-30
Issued date:
Abstract:
[EN] Silicon Carbide (SiC) is a lightweight material which is used in the fabrication of large space mirrors, of more than 500 millimetres diameter, and with a target of achieving an optical surface thickness of less ...[+]
Subjects: Distortion , Residual stress , Heat transfer model , Sensitivity study , Parametric study , Test cases comparison , Dynamic heat source plasma process , Static heat source plasma process , Welding simulations , Abaqus Welding Interface , Abaqus , Finite Element Analysis
Copyrigths: Cerrado
degree: Ingeniero Aeronáutico-Enginyeria Aeronàutica
Type: Proyecto/Trabajo fin de carrera/grado

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