Magureanu, M.; Mandache, NB.; Rizescu, C.; Bucur, C.; Cojocaru, B.; Man, IC.; Primo Arnau, AM.... (2021). Engineering hydrogenation active sites on graphene oxide and N-doped graphene by plasma treatment. Applied Catalysis B Environmental. 287:1-11. https://doi.org/10.1016/j.apcatb.2021.119962
Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/183586
Título:
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Engineering hydrogenation active sites on graphene oxide and N-doped graphene by plasma treatment
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Autor:
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Magureanu, Monica
Mandache, N. B.
Rizescu, C.
Bucur, Cristina
Cojocaru, Bogdan
Man, Isabela C.
Primo Arnau, Ana Maria
Parvulescu, Vasile, I.
García Gómez, Hermenegildo
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Entidad UPV:
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Universitat Politècnica de València. Departamento de Química - Departament de Química
Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química
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Fecha difusión:
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Resumen:
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[EN] Graphene oxide (GO) and N-doped graphene [(N)G] graphenes were submitted to H-2 glow discharge under different discharge regimes, in both the negative glow and positive column plasma regions. The resulted catalysts ...[+]
[EN] Graphene oxide (GO) and N-doped graphene [(N)G] graphenes were submitted to H-2 glow discharge under different discharge regimes, in both the negative glow and positive column plasma regions. The resulted catalysts were fully characterized using several techniques such as Raman, DRIFT and XPS spectroscopy, powder X-ray diffraction, H-2 pulse chemisorption and H-2-, CO2- and NH3-TPD experiments. Density functional theory calculations were performed taking a slab model of graphene sheet with an optimized C-C bond length (1.426 angstrom) and a 16 angstrom vacuum layer between sheets. An overview of these characterizations showed that the O/C atomic ratio of GO is influenced by the plasma regime, indicating the occurrence of O removal, as also predicted by DFT calculations. In the case of (N)G, the plasma treatment also removes pyridinic N with an increase of the C/N ratio. The efficiency of the plasma modification has been checked through catalytic tests in hydroisomerization of 1-octene and hydrogenation of alpha-methyl-styrene. Contrarily to classical thermal activation requiring high temperatures, the generation of the defects by treating with plasma occurs at voltages in the range of 2 5 kV. In consequence, the hydrogenation and isomerization of alkenes resulted with high yields and good selectivities. Graphene prepared from sodium alginate from brown algae was considered as reference in these investigations.
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Palabras clave:
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Graphene oxide as catalyst
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N-doped graphene as catalyst
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Hydrogen plasma activation of graphenes
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1-Octene hydroisomerization
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Alpha-Methylstyrene hydrogenation
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Derechos de uso:
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Reconocimiento - No comercial - Sin obra derivada (by-nc-nd)
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Fuente:
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Applied Catalysis B Environmental. (issn:
0926-3373
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DOI:
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10.1016/j.apcatb.2021.119962
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Editorial:
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Elsevier
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Versión del editor:
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https://doi.org/10.1016/j.apcatb.2021.119962
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Código del Proyecto:
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info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-098237-B-C21/ES/HETEROUNIONES DE GRAFENO CON CONFIGURACION CONTROLADA. SINTESIS Y APLICACIONES COMO SOPORTE EN CATALISIS Y EN ELECTRODOS/
info:eu-repo/grantAgreement/UEFISCDI//16N%2F2019/
info:eu-repo/grantAgreement/UEFISCDI//PN-III-P4-ID-PCE-2016-0146 121%2F2017/
info:eu-repo/grantAgreement/UEFISCDI//PN-III-P1-1.1-TE-2016-2191 89%2F2018/
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Agradecimientos:
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This work was supported by the Romanian Ministry of Education and Research UEFISCDI (projects PN-III-P4-ID-PCE-2016-0146, nr. 121/2017, PN-III-P1-1.1-TE-2016-2191, nr. 89/2018 and 16N/2019) and by the Spanish Ministry of ...[+]
This work was supported by the Romanian Ministry of Education and Research UEFISCDI (projects PN-III-P4-ID-PCE-2016-0146, nr. 121/2017, PN-III-P1-1.1-TE-2016-2191, nr. 89/2018 and 16N/2019) and by the Spanish Ministry of Science and Innovation (Severo Ochoa and RTI2018-89237-CO2-R1). MM thanks Dr. F. Gherendi for the calibration of the OES system.
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Tipo:
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Artículo
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