High-Pressure Synthesis of betha and alpha-In2Se3-Like Structures in Ga2S3

Abstract

[EN] The synthesis of polymorphs of alpha '-Ga2S3 at room temperature on compression/decompression is studied from a joint experimental and theoretical point of view to reveal the nature of their crystalline structures. The results of Raman scattering and X-ray diffraction measurements on these polymorphs have been analyzed supported by theoretical ab initio simulations. On compression, alpha ' Ga2S3 undergoes a phase transition above 16 GPa to beta '-Ga2S3 with a tetradymite-like (R-3m) structure, isostructural with beta-In2Se3. On decompression, beta '-Ga2S3 undergoes a phase transition below 9.0 GPa to phi-Ga2S3, which is isostructural with alpha-In2Se3 (R3m). Raman signatures of symmetry breaking as well as clear structural differences between the pressure dependence of the unit-cell volume per formula unit, zero-pressure axial compressibilities, bulk modulus, and their first pressure derivative between beta '-Ga2S3 and phi-Ga2S3 have allowed us to determine the R3m nature of phi-Ga2S3. The observation of the R3m phase is also supported by theoretical total energy ab initio simulations. This result unveils a pressure-induced paraelectricferroelectric R-3m-to-R3m transition, like the theoretically predicted temperature-induced transition in several III-VI B2X3 compounds, which could find use in technological applications. Finally, phi-Ga2S3 undergoes a phase transition below 1.0 GPa to gamma-Ga2S3 with a disordered zincblende (F-43m) phase, isostructural with alpha-Ga2Se3 and remains metastable at room conditions. Since the disordered zincblende phase of Ga2X3 chalcogenides has also been found upon decompression in AGa2X4 chalcogenides, we discuss the relation between the pressure-induced phase transitions of both Ga2X3 and AGa2X4 compounds.