Process and optical modeling of black silicon

Handle

https://riunet.upv.es/handle/10251/206713

Cita bibliográfica

Sánchez Plaza, G.; Urquia, A. (2024). Process and optical modeling of black silicon. Optics Express. 32(10):17704-17718. https://doi.org/10.1364/OE.516245

Titulación

Resumen

[EN] Black silicon is relevant for the photovoltaic industry when searching for lowreflectance, low-defect front surface, which is the goal of this work. We have fabricated samples using reactive ion etching (RIE) plus chemical etching for the smoothing, characterized them, and built modeling tools capable of reproducing the resulting geometric features, based on the process parameters. Reflectance is simulated using a proprietary rigorous coupled wave analysis (RCWA)-based tool, and compared with the experimental results. A good matching was achieved using a simple unit cell, and a better agreement when using a 0.5 square microns sample. Finally, an optimum trade-off between low reflectance and low thickness has been achieved.

Fuente

Optics Express issn: 1094-4087

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