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High-pressure studies of topological insulators Bi2Se3,Bi2Te3, and Sb2Te3

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High-pressure studies of topological insulators Bi2Se3,Bi2Te3, and Sb2Te3

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dc.contributor.author Manjón, F. J. es_ES
dc.contributor.author Vilaplana Cerda, Rosario Isabel es_ES
dc.contributor.author Gomis Hilario, Oscar es_ES
dc.contributor.author Pérez-González, E. es_ES
dc.contributor.author Santamaría-Pérez, D. es_ES
dc.contributor.author Marín-Borrás, V. es_ES
dc.contributor.author Segura-García del Río, A. es_ES
dc.contributor.author González, Jesús es_ES
dc.contributor.author Rodríguez-Hernández, P. es_ES
dc.contributor.author Muñoz, A. es_ES
dc.contributor.author Drasar, C. es_ES
dc.contributor.author Kucek, V. es_ES
dc.contributor.author Muñoz-Sanjosé, V.
dc.date.accessioned 2013-10-02T08:04:12Z
dc.date.issued 2013-04
dc.identifier.issn 0370-1972
dc.identifier.uri http://hdl.handle.net/10251/32517
dc.description.abstract Bi2Se3, Bi2Te3, and Sb2Te3 are narrow bandgap semiconductors with tetradymite crystal structure (R-3m) which have been extensively studied along with their alloys due to their promising operation as thermoelectric materials in the temperature range between 300 and 500¿K. Studies on these layered semiconductors have increased tremendously in the last years since they have been recently predicted and demonstrated to behave as 3D topological insulators. In particular, a number of high-pressure studies have been done in the recent years in these materials. In this work we summarize the main results of the high-pressure studies performed in this family of semiconductors to date. In particular, we review recent results that address the main characteristics of the pressure-induced electronic topological transition and structural phase transitions observed in this family of compounds. Future high-pressure studies to be performed on these 3D topological insulators are also commented. es_ES
dc.description.sponsorship This study was supported by the Spanish government and EU-FEDER under Grants: MAT2008-06873-C02-02, TEC2011-28076-C02-02, MAT2010-21270-C04-01/03/04, and by MALTA Consolider Ingenio 2010 project (CSD2007-00045). Due acknowledgement is also given to Generalitat Valenciana through projects Prometeo GV2011/035 and ISIC/2012/008. We are also indebted to the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E. P-G., A. M., and P. R-H. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. en_EN
dc.format.extent 8 es_ES
dc.language Inglés es_ES
dc.publisher Wiley-VCH Verlag es_ES
dc.relation.ispartof Physica Status Solidi (b) es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Bi2Se3 es_ES
dc.subject Bi2Te3 es_ES
dc.subject High pressure es_ES
dc.subject Sb2Te3 es_ES
dc.subject Topological insulators es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title High-pressure studies of topological insulators Bi2Se3,Bi2Te3, and Sb2Te3 es_ES
dc.type Artículo es_ES
dc.embargo.lift 10000-01-01
dc.embargo.terms forever es_ES
dc.identifier.doi 10.1002/pssb.201200672
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2008-06873-C02-02/ES/SEMICONDUCTORES MAGNETICOS DE GAP ANCHO (ZNM)O (M:CO,MN,FE) Y SUS FASES DE ALTA PRESION. DEPOSICION E CAPA DELGADA Y PROPIEDADES ESTRUCTURALES Y MAGNETO-OPTICAS/
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-01/ES/SINTESIS Y CARACTERIZACION OPTICA, ELECTRONICA, ESTRUCTURAL Y VIBRACIONAL DE NUEVOS MATERIALES BAJO CONDICIONES EXTREMAS DE PRESION Y TEMPERATURA/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//TEC2011-28076-C02-02/ES/CRECIMIENTO CRISTALINO DE ALEACIONES II-VI PARA LA FOTONICA EMERGENTE DE UV BASADA EN OXIDOS/
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-03/ES/MATERIALES, NANOMATERIALES Y AGREGRADOS BAJO CONDICIONES EXTREMAS. PROPIEDADES ELECTRONICAS Y DINAMICAS DESDE METODOS AB INITIO/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/
dc.relation.projectID info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/
dc.relation.projectID info:eu-repo/grantAgreement/GVA//GV%2F2011%2F035/
dc.relation.projectID info:eu-repo/grantAgreement/GVA//ISIC%2F2012%2F008/
dc.relation.projectID info:eu-repo/grantAgreement/UPV//PAID-05-11-0914/
dc.relation.projectID info:eu-repo/grantAgreement/UPV//PAID-06-11-0966/
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica es_ES
dc.description.bibliographicCitation Manjón, FJ.; Vilaplana Cerda, RI.; Gomis Hilario, O.; Pérez-González, E.; Santamaría-Pérez, D.; Marín-Borrás, V.; Segura-García Del Río, A.... (2013). High-pressure studies of topological insulators Bi2Se3,Bi2Te3, and Sb2Te3. Physica Status Solidi (b). 250(4):669-676. https://doi.org/10.1002/pssb.201200672 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1002/pssb.201200672 es_ES
dc.description.upvformatpinicio 669 es_ES
dc.description.upvformatpfin 676 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 250 es_ES
dc.description.issue 4 es_ES
dc.relation.senia 238549
dc.contributor.funder Ministerio de Ciencia e Innovación
dc.contributor.funder European Regional Development Fund
dc.contributor.funder Generalitat Valenciana
dc.contributor.funder Universitat Politècnica de València
dc.contributor.funder Ministerio de Educación y Ciencia es_ES


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