- -

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

RiuNet: Repositorio Institucional de la Universidad Politécnica de Valencia

Compartir/Enviar a

Citas

Estadísticas

  • Estadisticas de Uso

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Mostrar el registro sencillo del ítem

Ficheros en el ítem

Thumbnail
Nombre: ViGoPe13.pdf
Tamaño: 2.253Mb
Formato: PDF
Descripción: Versión editorial
Abrir
dc.contributor.author Vilaplana Cerda, Rosario Isabel es_ES
dc.contributor.author Gomis Hilario, Oscar es_ES
dc.contributor.author Pérez-González, E. es_ES
dc.contributor.author Ortiz, H. M. es_ES
dc.contributor.author Manjón Herrera, Francisco Javier es_ES
dc.contributor.author Rodríguez-Hernández, P. es_ES
dc.contributor.author Muñoz, Alfonso es_ES
dc.contributor.author Alonso Gutiérrez, P. es_ES
dc.contributor.author Sanjuán, M.L. es_ES
dc.contributor.author Ursaki, Veacheslav es_ES
dc.contributor.author Tiginyanu, Ivan es_ES
dc.date.accessioned 2014-02-21T12:37:43Z
dc.date.available 2014-02-21T12:37:43Z
dc.date.issued 2013-06-17
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10251/35870
dc.description.abstract High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20¿GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new peak that does not correspond to the defect chalcopyrite phase. The pressure dependence of the Raman spectra with this new peak and those of the disordered zincblende phase is also reported and discussed. © 2013 AIP Publishing LLC es_ES
dc.description.sponsorship This study was supported by the Spanish government MEC under Grants No. MAT2010-21270-C04-01/03/04, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E.P.-G., A.M., and P.R.-H. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. en_EN
dc.language Inglés es_ES
dc.publisher American Institute of Physics (AIP) es_ES
dc.relation.ispartof Journal of Applied Physics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject raman spectra es_ES
dc.subject phase transitions es_ES
dc.subject high pressure es_ES
dc.subject Raman scattering es_ES
dc.subject scattering measurements es_ES
dc.subject vacancies es_ES
dc.subject Crystal structure es_ES
dc.subject x-ray diffraction es_ES
dc.subject crystal defects es_ES
dc.subject Order disorder phase transitions es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4 es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1063/1.4810854
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-01/ES/SINTESIS Y CARACTERIZACION OPTICA, ELECTRONICA, ESTRUCTURAL Y VIBRACIONAL DE NUEVOS MATERIALES BAJO CONDICIONES EXTREMAS DE PRESION Y TEMPERATURA/
dc.relation.projectID info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-03/ES/MATERIALES, NANOMATERIALES Y AGREGRADOS BAJO CONDICIONES EXTREMAS. PROPIEDADES ELECTRONICAS Y DINAMICAS DESDE METODOS AB INITIO/
dc.relation.projectID info:eu-repo/grantAgreement/UPV//PAID-05-11-0914/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/
dc.relation.projectID info:eu-repo/grantAgreement/UPV//PAID-06-11-0966/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.description.bibliographicCitation Vilaplana Cerda, RI.; Gomis Hilario, O.; Pérez-González, E.; Ortiz, HM.; Manjón Herrera, FJ.; Rodríguez-Hernández, P.; Muñoz, A.... (2013). High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4. Journal of Applied Physics. 113:2335011-23350110. https://doi.org/10.1063/1.4810854 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1063/1.4810854 es_ES
dc.description.upvformatpinicio 2335011 es_ES
dc.description.upvformatpfin 23350110 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 113 es_ES
dc.relation.senia 245751
dc.identifier.eissn 1089-7550
dc.contributor.funder Ministerio de Ciencia e Innovación
dc.contributor.funder Universitat Politècnica de València
dc.contributor.funder Ministerio de Educación y Ciencia es_ES
dc.description.references A. MacKinnon, Tables of Numerical Data and Functional Relationships in Science and Technology, Landolt-Börnstein New Series, Group III, Vol. 17, pt. h, edited by O. Madelung, M. Schulz, and H. Weiss, (Springer-Verlag, Berlin, 1985), p. 124. es_ES
dc.description.references Bernard, J. E., & Zunger, A. (1988). Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4. Physical Review B, 37(12), 6835-6856. doi:10.1103/physrevb.37.6835 es_ES
dc.description.references Jiang, X., & Lambrecht, W. R. L. (2004). Electronic band structure of ordered vacancy defect chalcopyrite compounds with formulaII−III2−VI4. Physical Review B, 69(3). doi:10.1103/physrevb.69.035201 es_ES
dc.description.references Yahia, I. S., Fadel, M., Sakr, G. B., & Shenouda, S. S. (2010). Memory switching of ZnGa2Se4 thin films as a new material for phase change memories (PCMs). Journal of Alloys and Compounds, 507(2), 551-556. doi:10.1016/j.jallcom.2010.08.021 es_ES
dc.description.references Yahia, I. S., Fadel, M., Sakr, G. B., Yakuphanoglu, F., Shenouda, S. S., & Farooq, W. A. (2011). Analysis of current–voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode. Journal of Alloys and Compounds, 509(12), 4414-4419. doi:10.1016/j.jallcom.2011.01.068 es_ES
dc.description.references Hahn, H., Frank, G., Klingler, W., St�rger, A. D., & St�rger, G. (1955). Untersuchungen �ber tern�re Chalkogenide. VI. �ber Tern�re Chalkogenide des Aluminiums, Galliums und Indiums mit Zink, Cadmium und Quecksilber. Zeitschrift f�r anorganische und allgemeine Chemie, 279(5-6), 241-270. doi:10.1002/zaac.19552790502 es_ES
dc.description.references Errandonea, D., Kumar, R. S., Manjón, F. J., Ursaki, V. V., & Tiginyanu, I. M. (2008). High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4. Journal of Applied Physics, 104(6), 063524. doi:10.1063/1.2981089 es_ES
dc.description.references Hanada, T., Izumi, F., Nakamura, Y., Nittono, O., Huang, Q., & Santoro, A. (1997). Neutron and electron diffraction studies of ZnGa2Se4. Physica B: Condensed Matter, 241-243, 373-375. doi:10.1016/s0921-4526(97)00592-9 es_ES
dc.description.references Morón, M. C., & Hull, S. (2003). Order-disorder phase transition inZn1−xMnxGa2Se4: Long-range order parameter versusx. Physical Review B, 67(12). doi:10.1103/physrevb.67.125208 es_ES
dc.description.references Morón, M. C., & Hull, S. (2005). Effect of magnetic dilution in Zn1−xMnxGa2Se4 (0<x<0.5). Journal of Applied Physics, 98(1), 013904. doi:10.1063/1.1944220 es_ES
dc.description.references Morón, M. C., & Hull, S. (2007). The influence of magnetic dilution in the Zn1−xMnxGa2Se4 series with 0.5<x⩽1. Journal of Applied Physics, 102(3), 033919. doi:10.1063/1.2767273 es_ES
dc.description.references Antonioli, G., Lottici, P. P., & Razzetti, C. (1989). The structure of the defect chalcopyrite ZnGa2Se4 studied by EXAFS. physica status solidi (b), 152(1), 39-49. doi:10.1002/pssb.2221520104 es_ES
dc.description.references Haeuseler, H. (1978). FIR- und Ramanspektren von ternären Chalkogeniden des Galliums und Indiums mit Zink, Cadmium und Quecksilber. Journal of Solid State Chemistry, 26(4), 367-376. doi:10.1016/0022-4596(78)90171-8 es_ES
dc.description.references Eifler, A., Krauss, G., Riede, V., Krämer, V., & Grill, W. (2005). Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4. Journal of Physics and Chemistry of Solids, 66(11), 2052-2057. doi:10.1016/j.jpcs.2005.09.049 es_ES
dc.description.references Lottici, P. P., & Razzetti, C. (1983). A comparison of the raman spectra of ZnGa2Se4 and other gallium defect chalcopyrites. Solid State Communications, 46(9), 681-684. doi:10.1016/0038-1098(83)90506-9 es_ES
dc.description.references Razzetti, C., Lottici, P. P., & Antonioli, G. (1987). Structure and lattice dynamics of nonmagnetic defective AIIBIII2XIV4 compounds and alloys. Progress in Crystal Growth and Characterization, 15(1), 43-73. doi:10.1016/0146-3535(87)90009-8 es_ES
dc.description.references Attolini, G., Bini, S., Lottici, P. P., & Razzetti, C. (1992). Effects of Group III Cation Substitution in the Raman Spectra of Some Defective Chalcopyrites. Crystal Research and Technology, 27(5), 685-690. doi:10.1002/crat.2170270519 es_ES
dc.description.references Takahashi, Y., Namatsu, H., Machida, K., & Minegishi, K. (1993). Measurements of Diffusion Coefficiens of Water in Electron Cryclotron Resonance Plasma SiO2. Japanese Journal of Applied Physics, 32(Part 2, No. 3B), L431-L433. doi:10.1143/jjap.32.l431 es_ES
dc.description.references Ursaki, V. V., Burlakov, I. I., Tiginyanu, I. M., Raptis, Y. S., Anastassakis, E., & Anedda, A. (1999). Phase transitions in defect chalcopyrite compounds under hydrostatic pressure. Physical Review B, 59(1), 257-268. doi:10.1103/physrevb.59.257 es_ES
dc.description.references Allakhverdiev, K., Gashimzade, F., Kerimova, T., Mitani, T., Naitou, T., Matsuishi, K., & Onari, S. (2003). Raman scattering under pressure in ZnGa2Se4. Journal of Physics and Chemistry of Solids, 64(9-10), 1597-1601. doi:10.1016/s0022-3697(03)00077-5 es_ES
dc.description.references P. Alonso-Gutiérrez, “Estudio mediante espectroscopía Raman de la serie de semiconductores tetraédricos Zn1-xMnxGa2Se4, Colección de Estudios de Física, Vol. 78,” Ph.D. dissertation (Prensas Universitarias de Zaragoza, Zaragoza, Spain, 2009). es_ES
dc.description.references Alonso-Gutiérrez, P., Sanjuán, M. L., & Morón, M. C. (2009). Thermally activated cation ordering in Zn0.5Mn0.5Ga2Se4single crystals studied by Raman scattering. physica status solidi (c), 6(5), 1182-1186. doi:10.1002/pssc.200881218 es_ES
dc.description.references Caldera, D., Morocoima, M., Quintero, M., Rincon, C., Casanova, R., & Grima, P. (2011). On the crystal structure of the defective ternary compound. Solid State Communications, 151(3), 212-215. doi:10.1016/j.ssc.2010.11.031 es_ES
dc.description.references H. Schwer, PhD dissertation, Universität Freiburg, 1990. es_ES
dc.description.references Vilaplana, R., Gomis, O., Pérez-González, E., Ortiz, H. M., Manjón, F. J., Rodríguez-Hernández, P., … Tiginyanu, I. M. (2013). Thermally activated cation ordering in ZnGa2Se4single crystals studied by Raman scattering, optical absorption, andab initiocalculations. Journal of Physics: Condensed Matter, 25(16), 165802. doi:10.1088/0953-8984/25/16/165802 es_ES
dc.description.references Fuentes-Cabrera, M., & Sankey, O. F. (2001). Theoretical study of the ordered-vacancy semiconducting compound CdAl2Se4. Journal of Physics: Condensed Matter, 13(8), 1669-1684. doi:10.1088/0953-8984/13/8/305 es_ES
dc.description.references Fuentes-Cabrera, M. (2001). Ab initiostudy of the vibrational and electronic properties of CdGa2S4and CdGa2Se4under pressure. Journal of Physics: Condensed Matter, 13(45), 10117-10124. doi:10.1088/0953-8984/13/45/301 es_ES
dc.description.references Vilaplana, R., Robledillo, M., Gomis, O., Sans, J. A., Manjón, F. J., Pérez-González, E., … Ursaki, V. V. (2013). Vibrational study of HgGa2S4under high pressure. Journal of Applied Physics, 113(9), 093512. doi:10.1063/1.4794096 es_ES
dc.description.references Gomis, O., Vilaplana, R., Manjón, F. J., Pérez-González, E., López-Solano, J., Rodríguez-Hernández, P., … Ursaki, V. V. (2012). High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds. Journal of Applied Physics, 111(1), 013518. doi:10.1063/1.3675162 es_ES
dc.description.references Piermarini, G. J., Block, S., & Barnett, J. D. (1973). Hydrostatic limits in liquids and solids to 100 kbar. Journal of Applied Physics, 44(12), 5377-5382. doi:10.1063/1.1662159 es_ES
dc.description.references Syassen, K. (2008). Ruby under pressure. High Pressure Research, 28(2), 75-126. doi:10.1080/08957950802235640 es_ES
dc.description.references Mao, H. K., Xu, J., & Bell, P. M. (1986). Calibration of the ruby pressure gauge to 800 kbar under quasi-hydrostatic conditions. Journal of Geophysical Research, 91(B5), 4673. doi:10.1029/jb091ib05p04673 es_ES
dc.description.references Perdew, J. P., Burke, K., & Ernzerhof, M. (1997). Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]. Physical Review Letters, 78(7), 1396-1396. doi:10.1103/physrevlett.78.1396 es_ES
dc.description.references Manjón, F. J., Gomis, O., Rodríguez-Hernández, P., Pérez-González, E., Muñoz, A., Errandonea, D., … Ursaki, V. V. (2010). Nonlinear pressure dependence of the direct band gap in adamantine ordered-vacancy compounds. Physical Review B, 81(19). doi:10.1103/physrevb.81.195201 es_ES
dc.description.references Eifler, A., Hecht, J.-D., Lippold, G., Riede, V., Grill, W., Krauß, G., & Krämer, V. (1999). Combined infrared and Raman study of the optical phonons of defect chalcopyrite single crystals. Physica B: Condensed Matter, 263-264, 806-808. doi:10.1016/s0921-4526(98)01292-7 es_ES
dc.description.references Baroni, S., de Gironcoli, S., Dal Corso, A., & Giannozzi, P. (2001). Phonons and related crystal properties from density-functional perturbation theory. Reviews of Modern Physics, 73(2), 515-562. doi:10.1103/revmodphys.73.515 es_ES
dc.description.references Giannozzi, P., Baroni, S., Bonini, N., Calandra, M., Car, R., Cavazzoni, C., … Wentzcovitch, R. M. (2009). QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials. Journal of Physics: Condensed Matter, 21(39), 395502. doi:10.1088/0953-8984/21/39/395502 es_ES
dc.description.references Kroumova, E., Aroyo, M. I., Perez-Mato, J. M., Kirov, A., Capillas, C., Ivantchev, S., & Wondratschek, H. (2003). Bilbao Crystallographic Server : Useful Databases and Tools for Phase-Transition Studies. Phase Transitions, 76(1-2), 155-170. doi:10.1080/0141159031000076110 es_ES
dc.description.references Loudon, R. (1964). The Raman effect in crystals. Advances in Physics, 13(52), 423-482. doi:10.1080/00018736400101051 es_ES
dc.description.references Alonso-Gutiérrez, P., & Sanjuán, M. L. (2008). Ordinary and extraordinary phonons and photons: Raman study of anisotropy effects in the polar modes ofMnGa2Se4. Physical Review B, 78(4). doi:10.1103/physrevb.78.045212 es_ES
dc.description.references Manjón, F. J., Marí, B., Serrano, J., & Romero, A. H. (2005). Silent Raman modes in zinc oxide and related nitrides. Journal of Applied Physics, 97(5), 053516. doi:10.1063/1.1856222 es_ES
dc.description.references Alonso-Gutiérrez, P., Sanjuán, M. L., & Morón, M. C. (2007). A Raman Study Of Order-Disorder Phenomena In Zn1−xMnxGa2Se4 Compounds. AIP Conference Proceedings. doi:10.1063/1.2729831 es_ES
dc.description.references Lulek, T. (1984). Density of states in the reciprocal lattice for a one-dimensional periodic Heisenberg magnet. Journal de Physique, 45(1), 29-34. doi:10.1051/jphys:0198400450102900 es_ES
dc.description.references Frogley, M. D., Sly, J. L., & Dunstan, D. J. (1998). Pressure dependence of the direct band gap in tetrahedral semiconductors. Physical Review B, 58(19), 12579-12582. doi:10.1103/physrevb.58.12579 es_ES
dc.description.references Frogley, M. D., & Dunstan, D. J. (1999). Comparability and Reliability of High-Pressure Band-Gap Data in Tetrahedral Semiconductors. physica status solidi (b), 211(1), 17-22. doi:10.1002/(sici)1521-3951(199901)211:1<17::aid-pssb17>3.0.co;2-2 es_ES
dc.description.references Bilz, H., & Kress, W. (1979). Phonon Dispersion Relations in Insulators. Springer Series in Solid-State Sciences. doi:10.1007/978-3-642-81347-4 es_ES
dc.description.references Grzechnik, A., Ursaki, V. V., Syassen, K., Loa, I., Tiginyanu, I. M., & Hanfland, M. (2001). Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4. Journal of Solid State Chemistry, 160(1), 205-211. doi:10.1006/jssc.2001.9224 es_ES
dc.description.references Meenakshi, S., Vijyakumar, V., Godwal, B. K., Eifler, A., Orgzall, I., Tkachev, S., & Hochheimer, H. D. (2006). High pressure X-ray diffraction study of CdAl2Se4 and Raman study of AAl2Se4 (A=Hg, Zn) and CdAl2X4 (X=Se, S). Journal of Physics and Chemistry of Solids, 67(8), 1660-1667. doi:10.1016/j.jpcs.2006.02.015 es_ES
dc.description.references Meenakshi, S., Vijayakumar, V., Eifler, A., & Hochheimer, H. D. (2010). Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4. Journal of Physics and Chemistry of Solids, 71(5), 832-835. doi:10.1016/j.jpcs.2010.02.007 es_ES
dc.description.references Gomis, O., Vilaplana, R., Manjón, F. J., Santamaría-Pérez, D., Errandonea, D., Pérez-González, E., … Ursaki, V. V. (2013). Crystal structure of HgGa2Se4 under compression. Materials Research Bulletin, 48(6), 2128-2133. doi:10.1016/j.materresbull.2013.02.037 es_ES
dc.description.references A̧lvarez-Garcı́a, J., Pérez-Rodrı́guez, A., Barcones, B., Romano-Rodrı́guez, A., Morante, J. R., Janotti, A., … Scheer, R. (2002). Polymorphism in CuInS2 epilayers: Origin of additional Raman modes. Applied Physics Letters, 80(4), 562-564. doi:10.1063/1.1435800 es_ES
dc.description.references Stanbery, B. J., Kincal, S., Kim, S., Chang, C. H., Ahrenkiel, S. P., Lippold, G., … Crisalle, O. D. (2002). Epitaxial growth and characterization of CuInSe2 crystallographic polytypes. Journal of Applied Physics, 91(6), 3598-3604. doi:10.1063/1.1446234 es_ES
dc.description.references Su, D. S., & Wei, S.-H. (1999). Transmission electron microscopy investigation and first-principles calculation of the phase stability in epitaxial CuInS2 and CuGaSe2 films. Applied Physics Letters, 74(17), 2483-2485. doi:10.1063/1.123014 es_ES


Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem