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dc.contributor.author | Vilaplana Cerda, Rosario Isabel![]() |
es_ES |
dc.contributor.author | Gomis Hilario, Oscar![]() |
es_ES |
dc.contributor.author | Pérez-González, E.![]() |
es_ES |
dc.contributor.author | Ortiz, H. M.![]() |
es_ES |
dc.contributor.author | Manjón Herrera, Francisco Javier![]() |
es_ES |
dc.contributor.author | Rodríguez-Hernández, P.![]() |
es_ES |
dc.contributor.author | Muñoz, Alfonso![]() |
es_ES |
dc.contributor.author | Alonso Gutiérrez, P.![]() |
es_ES |
dc.contributor.author | Sanjuán, M.L.![]() |
es_ES |
dc.contributor.author | Ursaki, Veacheslav![]() |
es_ES |
dc.contributor.author | Tiginyanu, Ivan![]() |
es_ES |
dc.date.accessioned | 2014-02-21T12:37:43Z | |
dc.date.available | 2014-02-21T12:37:43Z | |
dc.date.issued | 2013-06-17 | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/10251/35870 | |
dc.description.abstract | High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20¿GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new peak that does not correspond to the defect chalcopyrite phase. The pressure dependence of the Raman spectra with this new peak and those of the disordered zincblende phase is also reported and discussed. © 2013 AIP Publishing LLC | es_ES |
dc.description.sponsorship | This study was supported by the Spanish government MEC under Grants No. MAT2010-21270-C04-01/03/04, by MALTA Consolider Ingenio 2010 project (CSD2007-00045), and by the Vicerrectorado de Investigacion y Desarrollo of the Universitat Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E.P.-G., A.M., and P.R.-H. acknowledge computing time provided by Red Espanola de Supercomputacion (RES) and MALTA-Cluster. | en_EN |
dc.language | Inglés | es_ES |
dc.publisher | American Institute of Physics (AIP) | es_ES |
dc.relation.ispartof | Journal of Applied Physics | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject | raman spectra | es_ES |
dc.subject | phase transitions | es_ES |
dc.subject | high pressure | es_ES |
dc.subject | Raman scattering | es_ES |
dc.subject | scattering measurements | es_ES |
dc.subject | vacancies | es_ES |
dc.subject | Crystal structure | es_ES |
dc.subject | x-ray diffraction | es_ES |
dc.subject | crystal defects | es_ES |
dc.subject | Order disorder phase transitions | es_ES |
dc.subject.classification | FISICA APLICADA | es_ES |
dc.title | High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4 | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1063/1.4810854 | |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-01/ES/SINTESIS Y CARACTERIZACION OPTICA, ELECTRONICA, ESTRUCTURAL Y VIBRACIONAL DE NUEVOS MATERIALES BAJO CONDICIONES EXTREMAS DE PRESION Y TEMPERATURA/ | |
dc.relation.projectID | info:eu-repo/grantAgreement/MEC//CSD2007-00045/ES/MATERIA A ALTA PRESION/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-03/ES/MATERIALES, NANOMATERIALES Y AGREGRADOS BAJO CONDICIONES EXTREMAS. PROPIEDADES ELECTRONICAS Y DINAMICAS DESDE METODOS AB INITIO/ | |
dc.relation.projectID | info:eu-repo/grantAgreement/UPV//PAID-05-11-0914/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/ | |
dc.relation.projectID | info:eu-repo/grantAgreement/UPV//PAID-06-11-0966/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada | es_ES |
dc.description.bibliographicCitation | Vilaplana Cerda, RI.; Gomis Hilario, O.; Pérez-González, E.; Ortiz, HM.; Manjón Herrera, FJ.; Rodríguez-Hernández, P.; Muñoz, A.... (2013). High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4. Journal of Applied Physics. 113:2335011-23350110. https://doi.org/10.1063/1.4810854 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1063/1.4810854 | es_ES |
dc.description.upvformatpinicio | 2335011 | es_ES |
dc.description.upvformatpfin | 23350110 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 113 | es_ES |
dc.relation.senia | 245751 | |
dc.identifier.eissn | 1089-7550 | |
dc.contributor.funder | Ministerio de Ciencia e Innovación | |
dc.contributor.funder | Universitat Politècnica de València | |
dc.contributor.funder | Ministerio de Educación y Ciencia | es_ES |
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