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High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4

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High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4

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dc.contributor.author Gomis Hilario, Oscar es_ES
dc.contributor.author Vilaplana Cerda, Rosario Isabel es_ES
dc.contributor.author Manjón Herrera, Francisco Javier es_ES
dc.contributor.author Santamaría-Pérez, D. es_ES
dc.contributor.author Errandonea, D. es_ES
dc.contributor.author Pérez-González, E. es_ES
dc.contributor.author López-Solano, J. es_ES
dc.contributor.author Rodríguez-Hernández, P. es_ES
dc.contributor.author Muñoz, Alfonso es_ES
dc.contributor.author Tiginyanu, Ivan es_ES
dc.contributor.author Ursaki, Veacheslav es_ES
dc.date.accessioned 2014-02-21T12:40:12Z
dc.date.available 2014-02-21T12:40:12Z
dc.date.issued 2013-02-20
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10251/35871
dc.description.abstract In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB 2 X 4 ordered-vacancy compounds with tetragonal defect chalcopyrite structure. We have carried out high-pressure x-ray diffraction measurements up to 13.2¿GPa. Our measurements have been complemented and compared with total-energy ab initio calculations. The equation of state and the axial compressibilities for the low-pressure phase of HgGa2Se4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The theoretical cation-anion and vacancy-anion distances in HgGa2Se4 have been determined. The internal distance compressibility in HgGa2Se4 has been compared with those that occur in binary HgSe and ¿¿GaSe compounds. It has been found that the Hg-Se and Ga-Se bonds behave in a similar way in the three compounds. It has also been found that bulk compressibility of the compounds decreases following the sequence ¿¿-GaSe¿>¿HgGa2Se4¿>¿HgSe.¿ Finally, we have studied the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa2Se4. Our calculations report that the low-pressure phase of HgGa2Se4 becomes mechanically unstable above 13.3 GPa.. © 2013 American Institute of Physics es_ES
dc.language Inglés es_ES
dc.publisher American Institute of Physics (AIP) es_ES
dc.relation.ispartof Journal of Applied Physics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Elasticity es_ES
dc.subject x-ray diffraction es_ES
dc.subject elastic moduli es_ES
dc.subject high pressure es_ES
dc.subject vacancies es_ES
dc.subject Ab initio calculations es_ES
dc.subject Anisotropy es_ES
dc.subject Crystal structure es_ES
dc.subject elasticity theory es_ES
dc.subject Equations of state es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4 es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1063/1.4792495
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.description.bibliographicCitation Gomis Hilario, O.; Vilaplana Cerda, RI.; Manjón Herrera, FJ.; Santamaría-Pérez, D.; Errandonea, D.; Pérez-González, E.; López-Solano, J.... (2013). High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4. Journal of Applied Physics. 113(1):735101-7351010. doi:10.1063/1.4792495 http://jap.aip.org/resource/1/japiau/v113/i7/p073510_s1 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1063/1.4792495 es_ES
dc.description.upvformatpinicio 735101 es_ES
dc.description.upvformatpfin 7351010 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 113 es_ES
dc.description.issue 1 es_ES
dc.relation.senia 232682
dc.identifier.eissn 1089-7550


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