Rasigade, G.; Ziebell, M.; Marris-Morini, D.; Brimont, ACJ.; Gutiérrez Campo, AM.; Sanchis Kilders, P.; Fédéli, JM.... (2011). 10 Gbit/s Error-Free Silicon Optical Modulator for Both TE and TM Polarized Light. IEEE Photonics Technology Letters. 23(23):1799-1801. https://doi.org/10.1109/LPT.2011.2169662
Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/36854
Title:
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10 Gbit/s Error-Free Silicon Optical Modulator for Both TE and TM Polarized Light
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Author:
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Rasigade, G.
Ziebell, M.
Marris-Morini, D.
Brimont, Antoine Christian Jacques
Gutiérrez Campo, Ana María
Sanchis Kilders, Pablo
Fédéli, Jean Marc
Duan, Guanghua
Cassan, E.
Vivien, L.
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UPV Unit:
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Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
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Issued date:
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Abstract:
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[EN] We report the first experimental demonstration of a silicon optical modulator based on a pipin diode integrated in a 50-mu m radius ring resonator. Large modulation efficiency was obtained with a V pi L pi product of ...[+]
[EN] We report the first experimental demonstration of a silicon optical modulator based on a pipin diode integrated in a 50-mu m radius ring resonator. Large modulation efficiency was obtained with a V pi L pi product of 3 V.cm for both transverse-electric (TE) and transverse-magnetic (TM) input light. Insertion loss of the doped ring resonator was lower than 1 dB and 10-Gb/s operations was demonstrated with an extinction ratio of 5.9 dB for TE and of 5.3 dB for TM polarization. A bit-error rate (BER) lower than 10(-9) was measured in both TE and TM polarizations, proving the potential application of the modulator in optical transmission systems.
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Subjects:
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Integrated optoelectronics
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Modulation
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Ring resonator
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Silicon
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Copyrigths:
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Cerrado |
Source:
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IEEE Photonics Technology Letters. (issn:
1041-1135
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DOI:
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10.1109/LPT.2011.2169662
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Publisher:
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Institute of Electrical and Electronics Engineers (IEEE)
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Publisher version:
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http://dx.doi.org/10.1109/LPT.2011.2169662
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Project ID:
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info:eu-repo/grantAgreement/EC/FP7/224312/EU/pHotonics ELectronics functional Integration on CMOS/
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Thanks:
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The research leading to these results was supported by the European Community under grant agreement 224312 HELIOS and by the French ANR under project SILVER.
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Type:
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Artículo
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