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A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section

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A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section

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Aamer, M.; Gutiérrez Campo, AM.; Brimont, ACJ.; Vermeulen, D.; Roelkens, G.; Fedeli, J.; Håkansson, OA.... (2012). A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section. IEEE Photonics Technology Letters. 24(22):2031-2034. https://doi.org/10.1109/LPT.2012.2218593

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/38055

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Title: A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section
Author: Aamer, Mariam Gutiérrez Campo, Ana María Brimont, Antoine Christian Jacques Vermeulen, Diedrik Roelkens, Gunther Fedeli, Jean-Marc Håkansson, Ola Andreas Sanchis Kilders, Pablo
UPV Unit: Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Issued date:
Abstract:
[EN] A polarization rotator in silicon-on-insulator technology based on breaking the symmetry of the waveguide cross section is reported. The 25-mu m-long device is designed to be integrated with standard grating couplers ...[+]
Subjects: Integrated optics , Polarization rotator , Silicon-on-insulator (SOI) , CMOS Compatible , Compatible process , Complementary metal oxide semiconductors , Deep ultraviolet lithography , Grating couplers , Polarization conversion , Silicon on insulator , Silicon-on-insulators , Siliconon-insulator technology (SOI) , Symmetry-breaking , Waveguide cross section , Wavelength ranges , Circular waveguides , Conversion efficiency , Automobile manufacture
Copyrigths: Reserva de todos los derechos
Source:
IEEE Photonics Technology Letters. (issn: 1041-1135 )
DOI: 10.1109/LPT.2012.2218593
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Publisher version: http://dx.doi.org/10.1109/LPT.2012.2218593
Project ID:
info:eu-repo/grantAgreement/EC/FP7/224312/EU/pHotonics ELectronics functional Integration on CMOS/
info:eu-repo/grantAgreement/MICINN//TEC2008-06333/ES/DISPOSITIVOS NANOFOTONICOS EN SILICIO/
info:eu-repo/grantAgreement/GVA//PROMETEO%2F2010%2F087/ES/DESARROLLO DE NUEVOS DISPOSITIVOS NANOFOTONICOS BASADOS EN GUIAS DE SILICIO Y METAMATERIALES/
Thanks:
This work was supported by the European Commission under Project HELIOS (pHotonics Electronics functional Integration on CMOS), FP7-224312, TEC2008-06333 SINADEC and PROMETEO-2010-087 R&D Excellency Program (NANOMET).
Type: Artículo

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