- -

A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section

RiuNet: Repositorio Institucional de la Universidad Politécnica de Valencia

Compartir/Enviar a

Citas

Estadísticas

A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section

Mostrar el registro completo del ítem

Aamer, M.; Gutiérrez Campo, AM.; Brimont, ACJ.; Vermeulen, D.; Roelkens, G.; Fedeli, J.; Håkansson, OA.... (2012). A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section. IEEE Photonics Technology Letters. 24(22):2031-2034. doi:10.1109/LPT.2012.2218593

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/38055

Ficheros en el ítem

Metadatos del ítem

Título: A CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section
Autor:
Entidad UPV: Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Fecha difusión:
Resumen:
A polarization rotator in silicon-on-insulator technology based on breaking the symmetry of the waveguide cross section is reported. The 25-mu m-long device is designed to be integrated with standard grating couplers without ...[+]
Palabras clave: Integrated optics , Polarization rotator , Silicon-on-insulator (SOI) , CMOS Compatible , Compatible process , Complementary metal oxide semiconductors , Deep ultraviolet lithography , Grating couplers , Polarization conversion , Silicon on insulator , Silicon-on-insulators , Siliconon-insulator technology (SOI) , Symmetry-breaking , Waveguide cross section , Wavelength ranges , Circular waveguides , Conversion efficiency , Automobile manufacture
Derechos de uso: Cerrado
Fuente:
IEEE Photonics Technology Letters. (issn: 1041-1135 )
DOI: 10.1109/LPT.2012.2218593
Editorial:
Institute of Electrical and Electronics Engineers (IEEE)
Versión del editor: http://dx.doi.org/10.1109/LPT.2012.2218593
Código del Proyecto: info:eu-repo/grantAgreement/EC/FP7/224312
Agradecimientos:
This work was supported by the European Commission under Project HELIOS (pHotonics Electronics functional Integration on CMOS), FP7-224312, TEC2008-06333 SINADEC and PROMETEO-2010-087 R&D Excellency Program (NANOMET).
Tipo: Artículo

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro completo del ítem