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The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

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The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

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Trevisi, G.; Suárez, I.; Seravalli, L.; Rivas, D.; Frigeri, P.; Muñoz Matutano, G.; Grillo, V.... (2013). The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots. Journal of Applied Physics. 113(19):1943061-1943068. https://doi.org/10.1063/1.4805351

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Título: The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots
Autor: Trevisi, G. Suárez, I. Seravalli, L. Rivas, D. Frigeri, P. Muñoz Matutano, Guillermo Grillo, V. Nasi, L. Martínez-Pastor, J.
Entidad UPV: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Fecha difusión:
Resumen:
[EN] The structural and morphological features of bimodal-sized InAs/(In) GaAs quantum dots with density in the low 10(9) cm(-2) range were analyzed with transmission electron microscopy and atomic force microscopy and ...[+]
Palabras clave: Carrier transfer , Mu-m , Well , Photoluminescence , Luminescence , Evolution , Emission , Dynamics , Islands , Escape
Derechos de uso: Reserva de todos los derechos
Fuente:
Journal of Applied Physics. (issn: 0021-8979 )
DOI: 10.1063/1.4805351
Editorial:
American Institute of Physics (AIP)
Versión del editor: http://dx.doi.org/10.1063/1.4805351
Código del Proyecto:
info:eu-repo/grantAgreement/MICINN//TEC2011-29120-C05-01/ES/PUNTOS CUANTICOS SEMICONDUCTORES COMO CLAVE PARA FUTURAS TECNOLOGIAS: DE LA NANOFOTONICA A LA NANOPLASMONICA/
info:eu-repo/grantAgreement/EC/FP6/500101/EU/Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics/SANDIE/
info:eu-repo/grantAgreement/GVA//PROMETEO09%2F2009%2F074/ES/Nanotecnología y Nanomateriales para la Conversión Solar Fotovoltaica/
Agradecimientos:
This work was supported through the Spanish MCINN and Generalitat Valenciana Grants Nos. TEC2011-29120-C05-01 and PROMETEO/2009/074, respectively, and by the 'SANDiE' Network of Excellence of EC, Contract No. NMP4-CT-2004-500101. ...[+]
Tipo: Artículo

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