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High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN

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High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN

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Nombre: J. Ibañez;A. Segura;B. ...
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dc.contributor.author Ibáñez, J. es_ES
dc.contributor.author Segura, A. es_ES
dc.contributor.author García-Domene, B. es_ES
dc.contributor.author Oliva, R. es_ES
dc.contributor.author Manjón Herrera, Francisco Javier es_ES
dc.contributor.author Yamaguchi, T. es_ES
dc.contributor.author Nanishi, Y. es_ES
dc.contributor.author Artús, L. es_ES
dc.date.accessioned 2015-03-20T10:12:24Z
dc.date.available 2015-03-20T10:12:24Z
dc.date.issued 2012-07-24
dc.identifier.issn 1098-0121
dc.identifier.uri http://hdl.handle.net/10251/48140
dc.description.abstract We report on high-pressure optical absorption measurements on InN epilayers with a range of free-electron concentrations (5×1017–1.6×1019 cm−3) to investigate the effect of free carriers on the pressure coefficient of the optical band gap of wurtzite InN. With increasing carrier concentration, we observe a decrease of the absolute value of the optical band gap pressure coefficient of wurtzite InN. An analysis of our data based on the k·p model allows us to obtain a pressure coefficient of 32 meV/GPa for the fundamental band gap of intrinsic wurtzite InN. Optical absorption measurements on a 5.7-μm-thick InN epilayer at pressures above the wurtzite-to-rocksalt transition have allowed us to obtain an accurate determination of the indirect band gap energy of rocksalt InN as a function of pressure. Around the phase transition (∼15 GPa), a band gap value of 0.7 eV and a pressure coefficient of ∼23 meV/GPa are obtained. ©2012 American Physical Society es_ES
dc.description.sponsorship This work was supported by the Spanish Ministry of Science and Innovation through Project No. MAT2010-16116. en_EN
dc.language Inglés es_ES
dc.publisher American Physical Society es_ES
dc.relation.ispartof Physical Review B es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject III-V Nitrides es_ES
dc.subject Stability es_ES
dc.subject Alloys es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1103/PhysRevB.86.035210
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2010-16116/ES/PROPIEDADES OPTICAS DE MATERIALES OPTOELECTRONICOS Y FOTOVOLTAICOS/ es_ES
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.description.bibliographicCitation Ibáñez, J.; Segura, A.; García-Domene, B.; Oliva, R.; Manjón Herrera, FJ.; Yamaguchi, T.; Nanishi, Y.... (2012). High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN. Physical Review B. 86:35210-1-35210-5. https://doi.org/10.1103/PhysRevB.86.035210 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://journals.aps.org/prb/pdf/10.1103/PhysRevB.86.035210 es_ES
dc.description.upvformatpinicio 35210-1 es_ES
dc.description.upvformatpfin 35210-5 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 86 es_ES
dc.relation.senia 230160
dc.identifier.eissn 1550-235X
dc.contributor.funder Ministerio de Ciencia e Innovación es_ES
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