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dc.contributor.author | Gomis Hilario, Oscar | es_ES |
dc.contributor.author | Santamaría-Pérez, D. | es_ES |
dc.contributor.author | Vilaplana Cerda, Rosario Isabel | es_ES |
dc.contributor.author | Luna Molina, Ramón | es_ES |
dc.contributor.author | Sans, J. A. | es_ES |
dc.contributor.author | Manjón Herrera, Francisco Javier | es_ES |
dc.contributor.author | Errandonea, D. | es_ES |
dc.contributor.author | Pérez-González, E. | es_ES |
dc.contributor.author | Rodríguez-Hernández, P. | es_ES |
dc.contributor.author | Muñoz, A. | es_ES |
dc.contributor.author | Tiginyanu, I. M. | es_ES |
dc.contributor.author | Ursaki, V. V. | es_ES |
dc.date.accessioned | 2015-05-16T11:36:20Z | |
dc.date.available | 2015-05-16T11:36:20Z | |
dc.date.issued | 2014-01-15 | |
dc.identifier.issn | 0925-8388 | |
dc.identifier.uri | http://hdl.handle.net/10251/50329 | |
dc.description.abstract | In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB(2)X(4) ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1 GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa2S4 have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pressure dependence of the theoretical cation-anion and vacancy-anion distances and compressibilities in HgGa2S4 are reported and discussed in comparison to other related ordered-vacancy compounds. Finally, the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa2S4 has been studied. Our calculations indicate that the low-pressure phase of HgGa2S4 becomes mechanically unstable above 13.8 GPa. (C) 2013 Elsevier B. V. All rights reserved. | es_ES |
dc.description.sponsorship | This study was supported by the Spanish government MEC under Grants No: MAT2010-21270-C04-01/03/04 and CTQ2009-14596-C02-01, by the Comunidad de Madrid and European Social Fund (S2009/PPQ-1551 4161893), by MALTA Consolider Ingenio 2010 Project (CSD2007-00045), by Generalitat Valenciana (GVA-ACOMP-2013-1012), and by the Vicerrectorado de Investigacion y Desarrollo of the Universidad Politecnica de Valencia (UPV2011-0914 PAID-05-11 and UPV2011-0966 PAID-06-11). E.P-G., A. M., and P.R-H. acknowledge computing time provided by Red Espa ola de Supercomputacion (RES) and MALTA-Cluster. J.A.S. acknowledges Juan de la Cierva fellowship program for financial support. | en_EN |
dc.language | Inglés | es_ES |
dc.publisher | Elsevier | es_ES |
dc.relation.ispartof | Journal of Alloys and Compounds | es_ES |
dc.rights | Reserva de todos los derechos | es_ES |
dc.subject | Semiconductors | es_ES |
dc.subject | Equation of state | es_ES |
dc.subject | Elasticity | es_ES |
dc.subject | Mechanical properties | es_ES |
dc.subject | High-pressure | es_ES |
dc.subject | X-ray diffraction | es_ES |
dc.subject.classification | FISICA APLICADA | es_ES |
dc.title | Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure | es_ES |
dc.type | Artículo | es_ES |
dc.identifier.doi | 10.1016/j.jallcom.2013.08.123 | |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-04/ES/CRECIMIENTO Y CARACTERIZACION DE NANOESTRUCTURAS DE OXIDOS METALICOS BAJO ALTAS PRESIONES/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-01/ES/SINTESIS Y CARACTERIZACION OPTICA, ELECTRONICA, ESTRUCTURAL Y VIBRACIONAL DE NUEVOS MATERIALES BAJO CONDICIONES EXTREMAS DE PRESION Y TEMPERATURA/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/Gobierno de la Comunidad de Madrid//S2009%2FPPQ-1551/ES/Química a alta presión/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//CTQ2009-14596-C02-01/ES/Compresibilidad de Materiales/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/UPV//PAID-06-11-UPV2011-0966/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/MICINN//MAT2010-21270-C04-03/ES/MATERIALES, NANOMATERIALES Y AGREGRADOS BAJO CONDICIONES EXTREMAS. PROPIEDADES ELECTRONICAS Y DINAMICAS DESDE METODOS AB INITIO/ | es_ES |
dc.relation.projectID | info:eu-repo/grantAgreement/UPV//PAID-05-11-UPV2011-0914/ | es_ES |
dc.rights.accessRights | Abierto | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada | es_ES |
dc.contributor.affiliation | Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada | es_ES |
dc.description.bibliographicCitation | Gomis Hilario, O.; Santamaría-Pérez, D.; Vilaplana Cerda, RI.; Luna Molina, R.; Sans, JA.; Manjón Herrera, FJ.; Errandonea, D.... (2014). Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure. Journal of Alloys and Compounds. 583:70-78. https://doi.org/10.1016/j.jallcom.2013.08.123 | es_ES |
dc.description.accrualMethod | S | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1016/j.jallcom.2013.08.123 | es_ES |
dc.description.upvformatpinicio | 70 | es_ES |
dc.description.upvformatpfin | 78 | es_ES |
dc.type.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.description.volume | 583 | es_ES |
dc.relation.senia | 246536 | |
dc.contributor.funder | Gobierno de la Comunidad de Madrid | es_ES |
dc.contributor.funder | Ministerio de Ciencia e Innovación | es_ES |
dc.contributor.funder | Universitat Politècnica de València | es_ES |