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High nonlinear figure-of-merit amorphous silicon waveguides

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High nonlinear figure-of-merit amorphous silicon waveguides

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dc.contributor.author Matres Abril, Joaquín es_ES
dc.contributor.author Ballesteros García, Guillem es_ES
dc.contributor.author Gautier, Pauline es_ES
dc.contributor.author Fedeli, J.M. es_ES
dc.contributor.author Martí Sendra, Javier es_ES
dc.contributor.author Oton Nieto, Claudio José es_ES
dc.date.accessioned 2015-12-15T08:42:53Z
dc.date.available 2015-12-15T08:42:53Z
dc.date.issued 2013-02-25
dc.identifier.uri http://hdl.handle.net/10251/58812
dc.description.abstract The nonlinear response of amorphous silicon waveguides is reported and compared to silicon-on-insulator (SOI) samples. The real part of the nonlinear coefficient gamma is measured by four-wave-mixing and the imaginary part of gamma is characterized by measuring the nonlinear loss at different peak powers. The combination of both results yields a two-photon-absorption figure of merit of 4.9, which is more than 7 times higher than for the SOI samples. Time-resolved measurements and simulations confirm the measured nonlinear coefficient $\gamma$ and show the absence of slow free-carrier effects versus ns free-carrier lifetimes in the SOI samples. es_ES
dc.description.sponsorship We acknowledge financial support from the Spanish Ministry of Science and Innovation SINADEC (TEC2008-06333) and PROMETEO/2010/087 NANOFOTONICA projects and Universidad Politecnica de Valencia for PAID2011/1914 and J. Matres' doctoral grant. en_EN
dc.language Inglés es_ES
dc.publisher Optical Society of America: Open Access Journals es_ES
dc.relation.ispartof Optics Express es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Nonlinear optics es_ES
dc.subject Integrated optics es_ES
dc.subject Nonlinear optics, four-wave mixing es_ES
dc.subject Nonlinear optical materials es_ES
dc.subject.classification TEORIA DE LA SEÑAL Y COMUNICACIONES es_ES
dc.title High nonlinear figure-of-merit amorphous silicon waveguides es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1364/OE.21.003932
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//TEC2008-06333/ES/DISPOSITIVOS NANOFOTONICOS EN SILICIO/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/GVA//PROMETEO%2F2010%2F087/ES/DESARROLLO DE NUEVOS DISPOSITIVOS NANOFOTONICOS BASADOS EN GUIAS DE SILICIO Y METAMATERIALES/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/UPV//PAID2011-1914/ es_ES
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions es_ES
dc.description.bibliographicCitation Matres Abril, J.; Ballesteros García, G.; Gautier, P.; Fedeli, J.; Martí Sendra, J.; Oton Nieto, CJ. (2013). High nonlinear figure-of-merit amorphous silicon waveguides. Optics Express. 21(4):3932-3940. https://doi.org/10.1364/OE.21.003932 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1364/OE.21.003932 es_ES
dc.description.upvformatpinicio 3932 es_ES
dc.description.upvformatpfin 3940 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 21 es_ES
dc.description.issue 4 es_ES
dc.relation.senia 234110 es_ES
dc.identifier.eissn 1094-4087
dc.contributor.funder Ministerio de Ciencia e Innovación es_ES
dc.contributor.funder Generalitat Valenciana es_ES
dc.contributor.funder Universitat Politècnica de València es_ES
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