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A statistical analysis of the temperature coefficients of industrial silicon solar cells

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A statistical analysis of the temperature coefficients of industrial silicon solar cells

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dc.contributor.author Ponce Alcántara, Salvador es_ES
dc.contributor.author Connolly, James Patrick es_ES
dc.contributor.author Sánchez Plaza, Guillermo es_ES
dc.contributor.author Minguez, José Manuel es_ES
dc.contributor.author Hoffmann, Volker es_ES
dc.contributor.author Ordas, Ramon es_ES
dc.date.accessioned 2016-03-29T12:09:06Z
dc.date.available 2016-03-29T12:09:06Z
dc.date.issued 2014
dc.identifier.issn 1876-6102
dc.identifier.uri http://hdl.handle.net/10251/62060
dc.description.abstract This paper presents an experimental study of the variation in the performance of silicon solar cells with temperature. The cells studied were fabricated from standard electronic grade and upgraded metallurgical grade silicon. Both monocrystalline and multicrystalline silicon wafers are included. The main object is to evaluate critical cell parameters for cell performance against temperature. The critical parameters selected are the wafer type, wafer resistivity, fabrication process routing, and solar cell electrical parameters. Their impact on cell performance is evaluated by systematic study expressed in terms of temperature coefficients. The resulting quantitative study finds different cell performance sensitivities to specific parameters: the crystal growth, the use of electronic grade or upgraded metallurgical grade silicon wafers, and the fabrication process employed. It is shown that the temperature coefficient of the short circuit current is an important factor in the tendency of the temperature coefficient of the maximum power. This phenomenon is responsible for the superior temperature coefficient observed in solar cells fabricated from upgraded metallurgical grade silicon wafers. Furthermore, the study quantitatively demonstrates the sensitivity of cell temperature coefficient to fabrication process. The optimum process for a superior temperature coefficient is identified, and also corresponds to an improved overall efficiency. es_ES
dc.language Inglés es_ES
dc.publisher Elsevier es_ES
dc.relation.ispartof Energy Procedia es_ES
dc.rights Reconocimiento - No comercial - Sin obra derivada (by-nc-nd) es_ES
dc.subject Solar Cells es_ES
dc.subject Temperature Coefficient es_ES
dc.subject UMG-silicon es_ES
dc.title A statistical analysis of the temperature coefficients of industrial silicon solar cells es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1016/j.egypro.2014.08.029
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Ingeniería Electrónica - Departament d'Enginyeria Electrònica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.description.bibliographicCitation Ponce Alcántara, S.; Connolly, JP.; Sánchez Plaza, G.; Minguez, JM.; Hoffmann, V.; Ordas, R. (2014). A statistical analysis of the temperature coefficients of industrial silicon solar cells. Energy Procedia. 55:578-588. doi:10.1016/j.egypro.2014.08.029 es_ES
dc.description.accrualMethod Senia es_ES
dc.relation.publisherversion http://dx.doi.org/10.1016/j.egypro.2014.08.029 es_ES
dc.description.upvformatpinicio 578 es_ES
dc.description.upvformatpfin 588 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 55 es_ES
dc.relation.senia 271934 es_ES


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