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Influence of Dopant Loading on the Photo- and Electrochemical Properties of (N, O)-Co-doped Graphene.

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Influence of Dopant Loading on the Photo- and Electrochemical Properties of (N, O)-Co-doped Graphene.

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Baldoví, HG.; Albarracín Sánchez, F.; Alvaro Rodríguez, MM.; Ferrer Ribera, RB.; García Gómez, H. (2015). Influence of Dopant Loading on the Photo- and Electrochemical Properties of (N, O)-Co-doped Graphene. ChemPhysChem. 16(10):2094-2098. doi:10.1002/cphc.201500306

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/64757

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Title: Influence of Dopant Loading on the Photo- and Electrochemical Properties of (N, O)-Co-doped Graphene.
Author:
UPV Unit: Universitat Politècnica de València. Departamento de Química - Departament de Química
Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química
Issued date:
Abstract:
A series of (N, O)-co-doped graphenes with different N and O loadings are prepared by the pyrolysis of natural chitosan. When the percentage of dopant increases, the conductionband potential and charge-separation quantum ...[+]
Subjects: Nitrogen oxygen codoped graphene , Photochem electrochem property , doped graphene , conduction band potential , photochemistry , photoelectron spectroscopy , photophysical properties
Copyrigths: Cerrado
Source:
ChemPhysChem. (issn: 1439-7641 )
DOI: 10.1002/cphc.201500306
Publisher:
Wiley
Publisher version: http://dx.doi.org/10.1002/cphc.201500306
Thanks:
Financial support by the Spanish Ministry of Economy and Competitiveness (Severo Ochoa, CTQ2010-18671 and CTQ2012-32315) and Generalidad Valenciana (Prometeo 2012-019) is gratefully acknowledged.
Type: Artículo

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