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Pressure-induced phase transition and band-gap collapse in the wide-band-gap semiconductor InTaO4

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Pressure-induced phase transition and band-gap collapse in the wide-band-gap semiconductor InTaO4

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Errandonea, D.; Popescu, C.; Garg, A.; Botella, P.; Martinez García, D.; Pellicer Porres, J.; Rodríguez Hernández, P.... (2016). Pressure-induced phase transition and band-gap collapse in the wide-band-gap semiconductor InTaO4. Physical review B: Condensed matter and materials physics. 93(3):035204-1-035204-12. doi:10.1103/PhysRevB.93.035204

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Title: Pressure-induced phase transition and band-gap collapse in the wide-band-gap semiconductor InTaO4
Author:
UPV Unit: Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada
Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada
Issued date:
Abstract:
A pressure-induced phase transition, associated with an increase of the coordination number of In and Ta, is detected beyond 13 GPa in InTaO4 by combining synchrotron x-ray diffraction and Raman measurements in a diamond-anvil ...[+]
Subjects: Phase transition , High Pressure , Semiconductor
Copyrigths: Reserva de todos los derechos
Source:
Physical review B: Condensed matter and materials physics. (issn: 1098-0121 ) (eissn: 1550-235X )
DOI: 10.1103/PhysRevB.93.035204
Publisher:
American Physical Society
Publisher version: http://dx.doi.org/10.1103/PhysRevB.93.035204
Thanks:
This paper was partially supported by the Spanish Ministerio de Economia y Competitividad (MINECO) under Grants No. MAT2013-46649-C04-01/02/03 and No. MAT2015-71070-REDC (MALTA Consolider). The XRD experiments were performed ...[+]
Type: Artículo

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