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Correlation between ban structure and magneto-transport properties in HgTe/CdTe two-dimensional far-infrared detector superlattice

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Correlation between ban structure and magneto-transport properties in HgTe/CdTe two-dimensional far-infrared detector superlattice

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dc.contributor.author Braigue, M. es_ES
dc.contributor.author NAFIDI, ABDELHAKIM es_ES
dc.contributor.author Ibdaha, A. es_ES
dc.contributor.author Chaib, H. es_ES
dc.contributor.author Sahsah, H. es_ES
dc.contributor.author Daoud, M. es_ES
dc.contributor.author Marí Soucase, Bernabé es_ES
dc.contributor.author Mollar García, Miguel Alfonso es_ES
dc.contributor.author Chander Singh, K. es_ES
dc.contributor.author Hartiti, B. es_ES
dc.date.accessioned 2016-07-26T07:49:55Z
dc.date.available 2016-07-26T07:49:55Z
dc.date.issued 2012-11
dc.identifier.issn 0022-2291
dc.identifier.uri http://hdl.handle.net/10251/68184
dc.description.abstract Theoretical calculations of the electronic properties of n-type HgTe/CdTe superlattices (SLs) have provided an agreement with the experimental data on the magneto-transport behaviour. We have measured the conductivity, Hall mobility, Seebeck and Shubnikov-de Haas effects and angular dependence of the magnetoresistance. Our sample, grown by MBE, had a period d = d1 + d2 (124 layers) of d1 = 8.6 nm (HgTe)/d2 = 3.2 nm (CdTe). Calculations of the spectras of energy E(d2), E(kz) and E(kp), respectively, in the direction of growth and in plane of the superlattice; were performed in the envelope function formalism. The energy E(d2,Γ, 4.2 K), shown that when d2 increase the gap Eg decrease to zero at the transition semiconductor to semimetal conductivity behaviour and become negative accusing a semimetallic conduction. At 4.2 K, the sample exhibits n type conductivity, confirmed by Hall and Seebeck effects, with a Hall mobility of 2.5×105 cm2/V s. This allowed us to observe the Shubnikov-de Haas effect with n = 3.20×1012 cm−2. Using the calculated effective mass (m∗ E1(EF ) = 0.05m0) of the degenerated electrons gas, the Fermi energy (2D) was EF = 88 meV in agreement with 91 meV of thermoelectric power α. In intrinsic regime, α ∼ T −3/2 and RH T 3/2 indicates a gap Eg = E1−H H1 = 101 meV in agreement with calculated Eg(Γ, 300 K) = 105 meV. The formalism used here predicts that the system is semiconductor for d1/d2 = 2.69 and d2 < 100 nm. Here, d2 = 3.2 nm and Eg(Γ, 4.2 K) = 48 meV so this sample is a two-dimensional modulated nano-semiconductor and far-infrared detector (12 µm < λc < 28 µm). es_ES
dc.language Inglés es_ES
dc.publisher Springer Verlag (Germany) es_ES
dc.relation.ispartof Journal of Low Temperature Physics es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Theoretical band structure in the envelope function formalism es_ES
dc.subject Magneto-transport measurements es_ES
dc.subject Narrow gap nano-semiconductor es_ES
dc.subject Two-dimensional electronic system es_ES
dc.subject Far-infrared detector es_ES
dc.subject HgTe/CdTe superlattices es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Correlation between ban structure and magneto-transport properties in HgTe/CdTe two-dimensional far-infrared detector superlattice es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1007/s10909-012-0818-x
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.description.bibliographicCitation Braigue, M.; Nafidi, A.; Ibdaha, A.; Chaib, H.; Sahsah, H.; Daoud, M.; Marí Soucase, B.... (2012). Correlation between ban structure and magneto-transport properties in HgTe/CdTe two-dimensional far-infrared detector superlattice. Journal of Low Temperature Physics. 1-6. doi:10.1007/s10909-012-0818-x es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http:dx.doi.org/10.1007/s10909-012-0818-x es_ES
dc.description.upvformatpinicio 1 es_ES
dc.description.upvformatpfin 6 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.relation.senia 228622 es_ES
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