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p-type behavior of electrodeposited ZnO:Cu thin films

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p-type behavior of electrodeposited ZnO:Cu thin films

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dc.contributor.author Marí Soucase, Bernabé es_ES
dc.contributor.author Sahal, Mustapha es_ES
dc.contributor.author Mollar García, Miguel Alfonso es_ES
dc.contributor.author Cerqueira, F.M. es_ES
dc.contributor.author Samantilleke, Anura Priyajith es_ES
dc.date.accessioned 2016-07-29T08:28:14Z
dc.date.available 2016-07-29T08:28:14Z
dc.date.issued 2012-01
dc.identifier.issn 1432-8488
dc.identifier.uri http://hdl.handle.net/10251/68418
dc.description.abstract Cu-doped ZnO (ZnO:Cu) thin films and ZnO/ ZnO:Cu homojunction devices were electrodeposited on conductive glass substrates in a non-aqueous electrolyte containing Cu and Zn salts. The Cu content of the films is proportional to the Cu/Zn precursor ratio in the deposition electrolyte. ZnO:Cu was found to be of a hexagonal wurtzite structure with (002) preferred orientation. A transition from n-type to p-type was observed for ZnO:Cu films with a Cu/ Zn ratio higher than 2% as inferred from the change in the direction of the photocurrent. The rectifying characteristics shown by homojunction devices further confirm the p-type conductivity of ZnO:Cu layers. es_ES
dc.description.sponsorship This work was supported by the Spanish Government through MEC grant MAT2009-14625-C03-03 and the Portuguese Foundation for Science and Technology (FCT), CIENCIA 2007. Financial support by the European Commission through NanoCIS project (PIRSESGA-2010-269279) is gratefully acknowledged. en_EN
dc.language Español es_ES
dc.publisher Springer Verlag (Germany) es_ES
dc.relation.ispartof Journal of Solid State Electrochemistry es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject ZnO:Cu es_ES
dc.subject P-type es_ES
dc.subject Electrodeposition es_ES
dc.subject Photocurrent es_ES
dc.subject ZnO homojunction es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title p-type behavior of electrodeposited ZnO:Cu thin films es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1007/s10008-011-1635-x
dc.relation.projectID info:eu-repo/grantAgreement/MICINN//MAT2009-14625-C03-03/ES/Diseño, Sintesis Y Caracterizacion De Materiales Fotovoltaicos Avanzados De Alta Eficiencia/ es_ES
dc.relation.projectID info:eu-repo/grantAgreement/EC/FP7/269279/EU/Development of a new generation of CIGS-based solar cells/
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Departamento de Física Aplicada - Departament de Física Aplicada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.description.bibliographicCitation Marí Soucase, B.; Sahal, M.; Mollar García, MA.; Cerqueira, F.; Samantilleke, AP. (2012). p-type behavior of electrodeposited ZnO:Cu thin films. Journal of Solid State Electrochemistry. 16(1):1-5. https://doi.org/10.1007/s10008-011-1635-x es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http:dx.doi.org/10.1007/s10008-011-1635-x es_ES
dc.description.upvformatpinicio 1 es_ES
dc.description.upvformatpfin 5 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 16 es_ES
dc.description.issue 1 es_ES
dc.relation.senia 212280 es_ES
dc.identifier.eissn 1433-0768
dc.contributor.funder Ministerio de Ciencia e Innovación es_ES
dc.contributor.funder European Commission
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