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Structural and electrical study of the topological insulator SnBi2Te4 at high pressures

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Structural and electrical study of the topological insulator SnBi2Te4 at high pressures

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dc.contributor.author Vilaplana Cerda, Rosario Isabel es_ES
dc.contributor.author Sans Tresserras, Juan Ángel es_ES
dc.contributor.author Manjón Herrera, Francisco Javier es_ES
dc.contributor.author Andrada-Chacón, A. es_ES
dc.contributor.author Sánchez-Benitez, J. es_ES
dc.contributor.author Popescu, C. es_ES
dc.contributor.author Gomis, O. es_ES
dc.contributor.author Pereira, A. L. J. es_ES
dc.contributor.author García-Domene, B. es_ES
dc.contributor.author Rodríguez-Hernández, P. es_ES
dc.contributor.author Muñoz, A. es_ES
dc.contributor.author Daisenberger, D. es_ES
dc.contributor.author Oeckler, O. es_ES
dc.date.accessioned 2016-11-21T12:22:28Z
dc.date.available 2016-11-21T12:22:28Z
dc.date.issued 2016-11-15
dc.identifier.issn 0925-8388
dc.identifier.uri http://hdl.handle.net/10251/74435
dc.description.abstract We report high-pressure X-ray diffraction and electrical measurements of the topological insulator SnBi2Te4 at room temperature. The pressure dependence of the structural properties of the most stable phase of SnBi2Te4 at ambient conditions (trigonal phase) have been experimentally determined and compared with results of our ab initio calculations. Furthermore, a comparison of SnBi2Te4 with the parent compound Bi2Te3 shows that the central TeSnTe trilayer, which substitutes the Te layer at the center of the TeBiTeBiTe layers of Bi2Te3, plays a minor role in the compression of SnBi2Te4. Similar to Bi2Te3, our resistance measurements and electronic band structure simulations in SnBi2Te4 at high pressure suggest that this compound exhibits a pressure-induced electronic topological transition or Lifshitz transition between 3.5 and 5.0 GPa. (C) 2016 Published by Elsevier B.V. es_ES
dc.description.sponsorship We thank Dr. Philipp Urban for preparing the sample. This work has been performed under financial support from Spanish MINECO under projects MAT2013-46649-C4-2-P, MAT2015-71070-REDC and CTQ2015-67755-C2-1-R and from Spanish Ministerio de Educacion, Cultura y Deporte as part of "Programa Campus de Excelencia Internacional/Programa de Valoracion y Recursos Conjuntos de I + D + i VLC/CAMPUS" through projects SP20140701 and SP20140871. One of the experiments were performed at MSPD-BL04 beamline at ALBA Synchrotron with the collaboration of ALBA staff. J.A.S. thanks "Juan de la Cierva" fellowship program for funding. A. A.-C. and J.S.-B. are also grateful to Spanish MINECO for the FPI (BES-2013-066112) and Ramon y Cajal (RyC-2010-06276) fellowships. We acknowledge Diamond Light Source for time on beamline I15 under Proposal EE9102. en_EN
dc.language Inglés es_ES
dc.publisher Elsevier es_ES
dc.relation Spanish MINECO/MAT2013-46649-C4-2-P es_ES
dc.relation Spanish MINECO/MAT2015-71070-REDC es_ES
dc.relation Spanish MINECO/CTQ2015-67755-C2-1-R es_ES
dc.relation Spanish MINECO/BES-2013-066112 es_ES
dc.relation Spanish MINECO/RyC-2010-06276 es_ES
dc.relation Spanish Ministerio de Educacion, Cultura y Deporte as part of "Programa Campus de Excelencia Internacional/Programa de Valoracion y Recursos Conjuntos de I + D + i VLC/CAMPUS"/SP20140701 and SP20140871 es_ES
dc.relation "Juan de la Cierva" fellowship es_ES
dc.relation.ispartof Journal of Alloys and Compounds es_ES
dc.rights Reconocimiento - No comercial - Sin obra derivada (by-nc-nd) es_ES
dc.subject High pressure es_ES
dc.subject X-ray diffraction es_ES
dc.subject Transport properties es_ES
dc.subject Topological insulators es_ES
dc.subject Electronic topological transition es_ES
dc.subject.classification FISICA APLICADA es_ES
dc.title Structural and electrical study of the topological insulator SnBi2Te4 at high pressures es_ES
dc.type Artículo es_ES
dc.identifier.doi 10.1016/j.jallcom.2016.06.170
dc.rights.accessRights Abierto es_ES
dc.contributor.affiliation Universitat Politècnica de València. Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica - Centre de Tecnologies Físiques: Acústica, Materials i Astrofísica es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto de Diseño para la Fabricación y Producción Automatizada - Institut de Disseny per a la Fabricació i Producció Automatitzada es_ES
dc.contributor.affiliation Universitat Politècnica de València. Escuela Técnica Superior de Ingeniería del Diseño - Escola Tècnica Superior d'Enginyeria del Disseny es_ES
dc.contributor.affiliation Universitat Politècnica de València. Escuela Politécnica Superior de Alcoy - Escola Politècnica Superior d'Alcoi es_ES
dc.description.bibliographicCitation Vilaplana Cerda, RI.; Sans Tresserras, JÁ.; Manjón Herrera, FJ.; Andrada-Chacón, A.; Sánchez-Benitez, J.; Popescu, C.; Gomis, O.... (2016). Structural and electrical study of the topological insulator SnBi2Te4 at high pressures. Journal of Alloys and Compounds. 685:962-970. doi:10.1016/j.jallcom.2016.06.170 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1016/j.jallcom.2016.06.170 es_ES
dc.description.upvformatpinicio 962 es_ES
dc.description.upvformatpfin 970 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 685 es_ES
dc.relation.senia 317141 es_ES
dc.identifier.eissn 1873-4669


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