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Porous Silicon for Photosensitized Formation of Singlet Oxygen in Water and in Simulated Body Fluid: Two Methods of Modification by Undecylenic Acid

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Porous Silicon for Photosensitized Formation of Singlet Oxygen in Water and in Simulated Body Fluid: Two Methods of Modification by Undecylenic Acid

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dc.contributor.author Pastor Galiano, Ester Lorena es_ES
dc.contributor.author Balaguer Ramírez, María es_ES
dc.contributor.author Bychto, Leszek Andrzej es_ES
dc.contributor.author Salonen, Jarno es_ES
dc.contributor.author Lehto, Vesa-Pekka es_ES
dc.contributor.author Matveyeva, Eugenia es_ES
dc.contributor.author Chyrvony, Uladzimir es_ES
dc.date.accessioned 2017-01-11T16:35:21Z
dc.date.issued 2009-06
dc.identifier.issn 1533-4880
dc.identifier.uri http://hdl.handle.net/10251/76648
dc.description.abstract Initially H-terminated and therefore hydrophobic surface of electrochemically repared luminescent porous silicon (PSi) powder was transformed to the hydrophilic one by means of surface modification by undecylenic acid. Physical adsorption of undecylenic acid as a non-ionic surfactant and its chemical binding through C C bond opening and Si C bond formation were applied as two different methods of PSi surface modification, physical and chemical modification, respectively. Luminescence of aqueous suspensions of the both types of modified PSi powders in merely water and in simulated body fluid physiological electrolyte was measured as a function of time. Many-fold (up to 20 times) building-up of the luminescence intensity was observed for PSi aqueous suspensions during the first few days, the growth was followed by a slower (a week and more) luminescence intensity decay. As it is evidenced by FTIR spectra and SEM images, the effect of the luminescence growth and decay of PSi suspension in water can be in part attributed to the PSi surface oxidation accompanied by its dissolution and de-aggregation of large PSi particles. It is concluded also from the experiments on PSi luminescence reversible quenching by O2 that SiO-related surface states with the excitation energy about 2.2 eV are formed during water-assisted oxidation of Si nanocrystal surface. An appearance of a large number of such surface states can be also responsible for the observed PSi luminescence building-up. es_ES
dc.language Inglés es_ES
dc.publisher American Scientific Publishers es_ES
dc.relation.ispartof Journal of Nanoscience and Nanotechnology es_ES
dc.rights Reserva de todos los derechos es_ES
dc.subject Silicon Nanoparticles es_ES
dc.subject Luminescence es_ES
dc.subject Semiconductor Photosensitizer es_ES
dc.subject Surface Modification es_ES
dc.subject Aqueous Suspension es_ES
dc.title Porous Silicon for Photosensitized Formation of Singlet Oxygen in Water and in Simulated Body Fluid: Two Methods of Modification by Undecylenic Acid es_ES
dc.type Artículo es_ES
dc.embargo.lift 10000-01-01
dc.embargo.terms forever es_ES
dc.identifier.doi 10.1166/jnn.2009.NS16
dc.rights.accessRights Cerrado es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario Mixto de Tecnología Química - Institut Universitari Mixt de Tecnologia Química es_ES
dc.contributor.affiliation Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica es_ES
dc.description.bibliographicCitation Pastor Galiano, EL.; Balaguer Ramirez, M.; Bychto, LA.; Salonen, J.; Lehto, V.; Matveyeva, E.; Chyrvony, U. (2009). Porous Silicon for Photosensitized Formation of Singlet Oxygen in Water and in Simulated Body Fluid: Two Methods of Modification by Undecylenic Acid. Journal of Nanoscience and Nanotechnology. 9(6):3455-3461. doi:10.1166/jnn.2009.NS16 es_ES
dc.description.accrualMethod S es_ES
dc.relation.publisherversion http://dx.doi.org/10.1166/jnn.2009.NS16 es_ES
dc.description.upvformatpinicio 3455 es_ES
dc.description.upvformatpfin 3461 es_ES
dc.type.version info:eu-repo/semantics/publishedVersion es_ES
dc.description.volume 9 es_ES
dc.description.issue 6 es_ES
dc.relation.senia 242798 es_ES


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