Study and optimisation of parasitic elements in heterogeneously integrated laser diodes

This work presents a full RF analysis of a heterogeneously integrated laser diode (with an InP membrane on top of silicon waveguides) for very high speed (>40Gb/s) modulation. In order to achieve this, the optimal design of the laser cavity is studied from an electrical point of view using simulations of different models, obtaining the corresponding electric field and S11 parameter. A small-signal equivalent circuit has also been applied to extract and optimize the parasitic elements of the laser structure by fitting the S11 parameter previously obtained. Finally, the simulated results are compared and discussed with the measurement results from a real laser.