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Dynamic Tuning of Mean Carrier Momentum Relaxation Time in InGaAs InAlAs THz Photoconductive Switches

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Dynamic Tuning of Mean Carrier Momentum Relaxation Time in InGaAs InAlAs THz Photoconductive Switches

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Bockelt, AS.; Vidal Rodriguez, B. (2017). Dynamic Tuning of Mean Carrier Momentum Relaxation Time in InGaAs InAlAs THz Photoconductive Switches. IEEE Transactions on Terahertz Science & Technology. 7(1):107-113. doi:10.1109/TTHZ.2016.2636742

Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/10251/79235

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Title: Dynamic Tuning of Mean Carrier Momentum Relaxation Time in InGaAs InAlAs THz Photoconductive Switches
Author:
UPV Unit: Universitat Politècnica de València. Departamento de Comunicaciones - Departament de Comunicacions
Universitat Politècnica de València. Escuela Técnica Superior de Ingenieros de Telecomunicación - Escola Tècnica Superior d'Enginyers de Telecomunicació
Universitat Politècnica de València. Instituto Universitario de Tecnología Nanofotónica - Institut Universitari de Tecnologia Nanofotònica
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Abstract:
The carrier transport in InGaAs InAlAs multilayer heterostructures used for the implementation of terahertz (THz) photoconductive antennas is investigated under the injection of a continuous optical wave. By varying the ...[+]
Subjects: Terahertz Materials , Terahertz Radiation , Optical Pulses , Optical Receivers , Principal Component Analysis , Optical Switches , Optical Scattering , Biomedical Optical Imaging
Copyrigths: Reserva de todos los derechos
Source:
IEEE Transactions on Terahertz Science & Technology. (issn: 2156-342X )
DOI: 10.1109/TTHZ.2016.2636742
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Publisher version: http://dx.doi.org/10.1109/TTHZ.2016.2636742
Thanks:
This work was supported in part by the Spanish Ministry of Economy and Competitiveness through Project TEC2012-35797 and FPU Grant 12/02847.
Type: Artículo

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